One common failure type for high voltage industrial products is dielectric breakdown. The dielectric strength through air between metallic traces of printed circuit boards (PCBs) depends on environmental parameters (temperature and humidity) and the presence of surface contamination (i.e. flux residues). With the development of soldering technologies, fluxes used nowadays no longer require cleaning, these are so-called no-clean fluxes. In our research, we investigated how the use of this type of flux affects the breakdown voltage on a test PCB under different environmental conditions. Temperature and humidity were controlled within a wide range, and the breakdown voltages measured on clean and contaminated surfaces were compared under these conditions. We found that no-clean flux residues significantly (almost by 20%) decrease the dielectric strength of PCBs. Under humid conditions (at 80% relative humidity) the breakdown voltage was typically lower by ∼25% in case of both clean and contaminated PCB surfaces.
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http://dx.doi.org/10.1016/j.heliyon.2025.e42324 | DOI Listing |
Nanomaterials (Basel)
February 2025
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.
The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance. In this study, we investigated the interface characteristics of HfO and SiO/HfO gate dielectrics grown by atomic layer deposition (ALD) on SiC trench structures. The trench structure morphology was revealed using scanning electron microscopy (SEM).
View Article and Find Full Text PDFAdv Mater
March 2025
Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Applied Physics, University of Science and Technology Beijing, Beijing, 100083, China.
Pb-free dielectric energy storage capacitors are core components in advanced pulse-power electronic systems and devices. However, the relatively low energy density (W) for the industrial pillar BaTiO (BT)-based capacitors remains a significant obstacle for their cutting-edge applications, due to their low intrinsic polarization and breakdown strength (E). Herein, through chemical composition and local structure design, a giant W of 15.
View Article and Find Full Text PDFAnal Chim Acta
April 2025
Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan. Electronic address:
Background: Ambient ionization mass spectrometry (MS) is widely used due to its simplicity. Dielectric breakdown-based ionization has emerged as a promising technique, where air molecules like nitrogen are ionized, producing N and electrons. These initiate ion-molecule reactions that generate protons from water molecules, leading to analyte ionization via protonation.
View Article and Find Full Text PDFACS Appl Mater Interfaces
March 2025
School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China.
Lead-free dielectric capacitors are widely utilized in high-power pulse devices due to their outstanding power density, rapid charging-discharging speed, and environmental friendliness. However, there are still challenges in further improving their energy storage performance. Recently, a high-entropy strategy has received widespread attention to obtain high-performance dielectric capacitors.
View Article and Find Full Text PDFAdv Sci (Weinh)
March 2025
Center for Smart Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei, 430070, P. R. China.
Ferroelectric polymers for energy storage and conversions suffer from high energy losses. Despite great efforts in polymer composites with organic or inorganic fillers, limited successes are achieved with an often compromised dielectric constant (K). Here, a synthesized organic-inorganic hybrid-perfluorinated polyhedral oligomeric silsesquioxane (F-POSS) is presented for creating an ultralow-loss ferroelectric polymer composite.
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