Ferroelectric tunnel junctions (FTJs) harness the combination of ferroelectricity and quantum tunneling and thus herald opportunities in next-generation nonvolatile memory technologies. Recent advancements in the fabrication of ultrathin heterostructures have enabled the integration of ferroelectrics with various functional materials, forming hybrid tunneling-diode junctions. These junctions benefit from the modulation of the functional layer/ferroelectric interface through ferroelectric polarization, thus enabling further modalities and functional capabilities in addition to tunneling electroresistance. This Perspective aims to provide in-depth insight into the physical phenomena of several typical ferroelectric hybrid junctions, ranging from ferroelectric/dielectric, ferroelectric/multiferroic, and ferroelectric/superconducting to ferroelectric/2D materials, and finally their expansion into the realm of ferroelectric resonant tunneling diodes (FeRTDs). This latter aspect, , resonant tunneling, offers an approach to exploiting tunneling behavior in ferroelectric heterostructures. We discuss examples that have successfully shown room-temperature ferroelectric control of parameters such as the resonant peak, tunnel current ratio at peak, and negative differential resistance. We conclude the Perspective by summarizing the challenges and highlighting the opportunities for the future development of hybrid FTJs, with a special emphasis on a possible type of FeRTD device. The prospects for enhanced performance and expanded functionality ignite tremendous excitement in hybrid FTJs and FeRTDs for future nanoelectronics.
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