Step-Edge Guided Homoepitaxy Enables Highly Reversible Zn Plating/Stripping.

Angew Chem Int Ed Engl

School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.

Published: February 2025

Metal anodes are of profound impact towards the realization of energy-dense rechargeable batteries. However, the "hostless" metal redox always presents the disordered plating/stripping, aggravated by the side reactions and local anisotropy that cause the formation of excessive dendrites/voids and quickly lead to battery failure. Here we report step-edge guided homoepitaxy enabling ordered layer-by-layer Zn plating/stripping regardless of the (dis)charging conditions. Through engineering the atomic terrace height on the mono-oriented Zn(0002) foil anodes, both in-plane and out-of-plane epitaxy aligned to the underlying Zn lattice are demonstrated via the favored edge nucleation and strong interfacial interaction driven by the surface/interface energy minimization, achieving the electrochemical homoepitaxy of continuous, submillimeter-scale Zn(0002) crystal with nearly 100 % theoretical density. Accordingly, we achieve a high Coulombic efficiency of 99.8 %, high depths of discharge exceeding 51 % and 82 % along with record-high lifetimes of over a thousand and hundreds of hours, respectively, in zinc metal batteries. The breakthrough results provide new insights on the intrinsic metal plating/stripping from the view of reversible homoepitaxy for rechargeable energy-dense metal batteries.

Download full-text PDF

Source
http://dx.doi.org/10.1002/anie.202501176DOI Listing

Publication Analysis

Top Keywords

step-edge guided
8
guided homoepitaxy
8
metal batteries
8
metal
5
homoepitaxy
4
homoepitaxy enables
4
enables highly
4
highly reversible
4
plating/stripping
4
reversible plating/stripping
4

Similar Publications

Step-Edge Guided Homoepitaxy Enables Highly Reversible Zn Plating/Stripping.

Angew Chem Int Ed Engl

February 2025

School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.

Metal anodes are of profound impact towards the realization of energy-dense rechargeable batteries. However, the "hostless" metal redox always presents the disordered plating/stripping, aggravated by the side reactions and local anisotropy that cause the formation of excessive dendrites/voids and quickly lead to battery failure. Here we report step-edge guided homoepitaxy enabling ordered layer-by-layer Zn plating/stripping regardless of the (dis)charging conditions.

View Article and Find Full Text PDF
Article Synopsis
  • The study focuses on improving the epitaxial growth of two-dimensional semiconducting transition metal dichalcogenides (STMDCs) to enhance their use in next-generation electronics.
  • Researchers developed a model to better understand and optimize factors like interface strength and substrate alignment, achieving large-area growth of monolayer tungsten disulfide (WS) on a gold substrate.
  • The findings reveal that these monolayer WS structures can serve as highly sensitive templates for detecting organic molecules using surface-enhanced Raman scattering, contributing to advancements in material science and electronics.
View Article and Find Full Text PDF

Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer-scale single-crystal films. Both step-edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive.

View Article and Find Full Text PDF

Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of unidirectionally aligned monolayer MoS domains and single-crystal films on low-symmetry Au(101) vicinal facets a facile chemical vapor deposition method.

View Article and Find Full Text PDF

Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel.

Nat Nanotechnol

December 2022

State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.

Multilayer van der Waals (vdW) film materials have attracted extensive interest from the perspective of both fundamental research and technology. However, the synthesis of large, thick, single-crystal vdW materials remains a great challenge because the lack of out-of-plane chemical bonds weakens the epitaxial relationship between neighbouring layers. Here we report the continuous epitaxial growth of single-crystal graphite films with thickness up to 100,000 layers on high-index, single-crystal nickel (Ni) foils.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!