Silicon nitride (SiN) integrated photonics is a highly promising platform for photonic quantum information processing. However, the efficient generation of single photons remains a significant challenge. Epitaxial InAs/GaAs quantum dots (QDs) embedded in wavelength-scale nanocavities offer a promising solution as single-photon sources (SPSs), but their integration with SiN has not yet been demonstrated. In this work, we employed a photonic crystal (PhC) nanobeam cavity to realize a QD SPS on a SiN waveguide. We found that the second-order mode of a period-modulated PhC nanobeam cavity is located close to the waveguide mode in the momentum space and could present a way to efficiently couple photons from the QD SPS into the waveguide. We fabricated the SiN circuitry and QD SPSs separately and integrated the SPS onto the waveguide by transfer printing. We observed Purcell enhancement by the cavity and confirmed the coupling of single photons into the waveguide.
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Silicon nitride (SiN) integrated photonics is a highly promising platform for photonic quantum information processing. However, the efficient generation of single photons remains a significant challenge. Epitaxial InAs/GaAs quantum dots (QDs) embedded in wavelength-scale nanocavities offer a promising solution as single-photon sources (SPSs), but their integration with SiN has not yet been demonstrated.
View Article and Find Full Text PDFWe propose a strategy to monolithically integrate active III-V lasers and passive dielectric devices, where the passive waveguides are fabricated after the MBE growth of the III-V semiconductors on a planar Si substrate. This avoids any airgap at the active/passive interface, replaced by a thin dielectric interface layer which improves the light coupling efficiency. We demonstrate GaSb DLs butt-coupled to SiN waveguides with ∼23% transmission after 2 mm SiN, corresponding to ∼35% transmission at the active/passive interface.
View Article and Find Full Text PDFA high-speed infrared tellurium photodetector on a silicon nitride platform.
Nanoscale
December 2024
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, People's Republic of China.
The hybrid integration of two-dimensional (2D) materials on various photonic integration platforms has attracted widespread research interest because of the new functionalities enabled by the 2D materials for applications in photodetection, optical modulation and nonlinear optical signal processing. Tellurium is known to have high mobility, and quasi-2D tellurium is stable in air and has a small bandgap that may make it suitable for platform-independent scalable integration of high-performance photodetectors in the infrared band. In this work, we propose and implement a new structure for integrating tellurium with silicon nitride (SiN) waveguides, adding photodetector capability to an otherwise passive waveguide platform.
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View Article and Find Full Text PDFPolarization management, and in particular polarization rotation, is becoming increasingly important for photonic integrated circuits (PICs). While fiber-optic networks are generally polarization insensitive, the large aspect ratio of high-index-contrast PIC waveguides leads to a large polarization-dependent response of integrated components such as waveguides, optical cavities, couplers, etc. Although foundry-processed polarization rotators operating at telecom and datacom wavelengths (C- and O-band) have been demonstrated, to date, there have been few reports of devices operating at shorter wavelengths.
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