Background: Thin Film Transistors (TFTs) are increasingly prevalent electrical components in display products, ranging from smartphones to diagonal flat panel TVs. The limitations in existing TFT technologies, such as high-temperature processing, carrier mobility, lower ON/OFF ratio, device mobility, and thermal stability, result in the search for new semiconductor materials with superior properties.
Objective: The main objective of this present work is to fabrícate the efficient Single-Walled Carbon Nanotube Thin Film Transistor (TFT) for flat panel display.
Methods: Carbon Nano-Tubes (CNTs) are a promising semiconductor material for TFT devices due to their one-dimensional structure and exceptional characteristics. In this research work, the CNTTFTs have been fabricated using nano-fabrication techniques with a spin process. The fabricated devices have been characterized for structural, morphological, and electrical characteristics.
Results: The 20 μm channel length and 30 μm channel width fabricated device produces about 1.3 nA, which lies in the practical range of operating TFTs reported previously. Compared to reported patents and published works, this demonstrates a significant improvement.
Conclusion: Further guidelines and limitations of this fabrication method are also discussed for future efficient device fabrication.
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