Developing the Cd-free electron transport layer (ETL) is a crucial subject in the field of antimony selenide (SbSe) solar cells. At present, the power conversion efficiency (PCE) of the Cd-free SbSe solar cell is still substantially lower than that of CdS-based devices. It is significant to reveal the electron transfer features in SbSe/CdS heterojunction and SbSe/Cd-free ETL heterojunction for development of a Cd-free SbSe solar cell with high PCE. In this work, SbSe/Cd heterojunction and SbSe/ZnO heterojunction were systematically investigated from the view of PCE, trap state passivation, interface charge separation, and carrier kinetics on a picosecond time scale. Experimental results demonstrate that electron transfer at SbSe/CdS and SbSe/ZnO occurs on a comparable time scale with time constants of 1.38-3.42 and 1.91-3.17 ps, respectively. The PCE gap between the Cd-based device and the Cd-free device is mainly determined by the passivation effect. The excellent passivation effect of CdS on SbSe ensure the high electron transfer efficiency at SbSe/CdS heterojunction. Our results reveal the key challenges in improving the performance of Cd-free SbSe solar cells.
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http://dx.doi.org/10.1021/acs.jpclett.4c03330 | DOI Listing |
Adv Mater
November 2024
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
An effective defect passivation strategy is crucial for enhancing the performance of antimony selenosulfide (Sb(S,Se)) solar cells, as it significantly influences charge transport and extraction efficiency. Herein, a convenient and novel in situ passivation (ISP) technique is successfully introduced to enhance the performance of Sb(S,Se) solar cells, achieving a champion efficiency of 10.81%, which is among the highest recorded for Sb(S,Se) solar cells to date.
View Article and Find Full Text PDFFood Chem
January 2025
State Key Laboratory of Tea Plant Biology and Utilization, Anhui Agricultural University, 130 Changjiang West Road, Hefei, Anhui 230036, China; School of Tea and Food Science and Technology, Anhui Agricultural University, 130 Changjiang West Road, Hefei 230036, China. Electronic address:
Chem Mater
August 2023
Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland.
Aliovalent I-V-VI semiconductor nanocrystals are promising candidates for thermoelectric and optoelectronic applications. Famatinite CuSbSe stands out due to its high absorption coefficient and narrow band gap in the mid-infrared spectral range. This paper combines experiment and theory to investigate the synthesis and electronic structure of colloidal CuSbSe nanocrystals.
View Article and Find Full Text PDFNanomaterials (Basel)
March 2023
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
ACS Appl Mater Interfaces
December 2022
Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology, Nankai University, Tianjin300350, China.
Vapor-transport deposition (VTD) method is the main technique for the preparation of SbSe films. However, oxygen is often present in the vacuum tube in such a vacuum deposition process, and SbO is formed on the surface of SbSe because the bonding of Sb-O is formed more easily than that of Sb-Se. In this work, the formation of SbO and thus the carrier transport in the corresponding solar cells were studied by tailoring the deposition microenvironment in the vacuum tube during SbSe film deposition.
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