A multi-band high-sensitivity microwave sensor is reported. The two resonance units are based on complementary square spiral resonators (CSSRs) and produce four measurement bands through parasitic resonances. The four frequency bands are 2.001, 2.988, 5.438, and 7.755 GHz, respectively. Through an analysis of the coupling effects between the two CSSR resonance units, it is shown that the sensor is capable of simultaneously characterizing two samples with distinct dielectric properties. By adding a metal patch to the microstrip line, the overall quality factor of the sensor is enhanced, leading to higher sensitivity and accuracy in both real and imaginary part measurements. The measurement results demonstrate that this sensor provides an accurate and efficient solution for solid permittivity measurements.
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http://dx.doi.org/10.1063/5.0235295 | DOI Listing |
Rev Sci Instrum
January 2025
The State Key Laboratory of Complex Electromagnetic Environment Effects on Electronic and Information System, Luoyang 471004, China.
A multi-band high-sensitivity microwave sensor is reported. The two resonance units are based on complementary square spiral resonators (CSSRs) and produce four measurement bands through parasitic resonances. The four frequency bands are 2.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
School of Physics and Electronic-information Engineering, Hubei Engineering University, Xiaogan 432000, China.
In this article, we present a terahertz (THz) metamaterial absorber that blends two types of coordinated materials: Dirac semimetals and vanadium dioxide. Compared to other absorbers on the market, which are currently non-adjustable or have a single adjustment method, our absorber is superior because it has two coordinated modes with maximum adjustment ranges of 80.7% and 0.
View Article and Find Full Text PDFMulti-spectral imaging enhances the information diversity of the object with complex, expensive, and low integrated components. Here, we demonstrated an antenna-coupled microbolometric detector in complementary metal-oxide-semiconductor (CMOS) technology, utilizing SiO2 absorption and L-shaped fractal antenna to achieve multi-band detection from infrared (IR) to terahertz (THz). Experimental results demonstrate that the detector can achieve high sensitivity detection in both THz and IR bands, with the maximum detectivity of 5 (10 cm·Hz/W @305 GHz and 7 (10 cm·Hz/W @8.
View Article and Find Full Text PDFBound states in the continuum (BICs) on metasurfaces have garnered significant interest for their ultrahigh Q-factor potential in sensing applications. Reconfigurability and multi-band resonance are highly desirable for sensing systems. In this work, we introduce a metasurface comprising four nanocubes with different permittivity asymmetries, which can be dynamically adjusted using GeSbTe (GST225), a phase-change material, in the near-infrared (NIR) region.
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