First-principles study of anisotropic planar 2D BCN for sub-5 nm high-performance p-type transistors.

Two-dimensional (2D) materials are considered the potential channel for next-generation transistors. Unfortunately, the development of p-type 2D material transistors lags significantly behind that of n-type, thereby impeding the advancement of complementary logical circuits. In this study, we investigated the electronic properties of 2D BCN and analyzed the transport performance of p-type 2D BCN-6 FETs through first-principles calculations. The anisotropic electronic properties of BCN-6 led to variations in device transport performance along the zigzag and armchair directions. The on-state current of 10 nm BCN-6 FETs could reach 2415 μA μm and 1660 μA μm along the zigzag and armchair directions, respectively. Subthreshold swing (SS) values for both directions were 63 mV dec, nearing the limit of 60 mV dec. Even when the gate length was scaled down to 5 nm, the on-state current of BCN-6 FETs in both directions exceeded 1500 μA μm, which was approximately 160% of International Technology Roadmap for Semiconductors (ITRS) standards for high-performance (HP) devices. Furthermore, the delay time () and power dissipation (PDP) of BCN-6 FETs could fully satisfy ITRS requirements. Our work demonstrates that monolayer BCN-6 can serve as a competitive p-type channel for next-generation devices.