Fabrication of TeNT/TeO heterojunction based sensor for ultrasensitive detection of NO.

J Hazard Mater

School of Integrated Circuits, Dalian University of Technology, Dalian, Liaoning 116024, China. Electronic address:

Published: January 2025

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Tellurium nanotubes (TeNT) heterojunction with Tellurium oxide (TeO) were prepared by in situ oxidation at elevated temperatures in air. The chemiresistive type NO sensor was then fabricated by depositing the synthesized TeNT/TeO on the integrated gold electrodes. The response of the TeNT/TeO based sensor to 600 ppb NO was 38.8 %, which was about 3.2 times higher than that of the single-phase TeNT based sensor (12.1 %). The response and recovery time are 39 s and 49 s, respectively, which are substantially reduced compared to those of the pristine TeNT based sensor (133 s and 336 s) and the results reported in literature. The sensor also exhibits good stability with a response deviation of less than 2 % for 45 days and a good resistance to environmental disturbances. The improved sensor performance can be attributed to the heterojunction formed between TeNT and TeO. Density Functional Theory (DFT) calculations show that the formed TeNT/TeO heterojunction enhances the adsorption energy (-0.671 eV) and charge transfer (0.49 |e|) between NO and the TeNT/TeO.

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http://dx.doi.org/10.1016/j.jhazmat.2025.137229DOI Listing

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