The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays. However, thin-film perovskites with inhomogeneous spatial distribution of light emission and unstable surface under lithography are incompatible with the micro-LED devices. Continuous single-crystalline perovskite films with eliminated grain boundaries, stable surfaces and optical homogeneity are highly demanded for micro-LEDs, but their growth and device integration remain challenging. Here we realize the remote-epitaxy growth of crystalline perovskite films, enabling their seamless integration into micro-LEDs with a pixel size down to 4 μm. By incorporating a subnanometre graphene interlayer, we enable remote epitaxy and transfer of perovskites with relaxed strain. These micro-LEDs exhibit a high electroluminescence efficiency of 16.7% and a high brightness of 4.0 × 10 cd m. Such high performance stems from suppressed defects and efficient carrier transport in epitaxial perovskites with high crystallinity, relaxed strain and hundreds-of-nanometres thickness. The free-standing perovskites can be integrated with commercial electronic planes for independent and dynamic control of each pixel, thus facilitating both static image and video display. With these findings, we envision on-chip perovskite photonic sources such as ultracompact lasers and ultrafast LEDs.
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http://dx.doi.org/10.1038/s41565-024-01841-9 | DOI Listing |
Nat Nanotechnol
January 2025
Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China.
The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays. However, thin-film perovskites with inhomogeneous spatial distribution of light emission and unstable surface under lithography are incompatible with the micro-LED devices.
View Article and Find Full Text PDFNatl Sci Rev
January 2025
Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, South Korea.
Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high electron mobility, tunable emission wavelengths, durability under high current densities, compact size, self-emission, long lifespan, low-power consumption, fast response, and impressive brightness, are emerging as the choice of micro-light emitting diodes (µLEDs). However, challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Microelectronics, Shanghai University, Shanghai 200444, China.
GaN-based micro-light-emitting diodes (Micro-LEDs) are regarded as promising light sources for near-eye-display applications such as augmented reality/virtual reality (AR/VR) displays due to their high resolution, high brightness, and low power consumption. However, the application of Micro-LEDs in high-pixel-per-inch (PPI) displays is constrained by the drop in efficiency caused by sidewall defects in small-sized devices. In this study, a process method involving NH plasma pretreatment to reduce sidewall defects is proposed and investigated for enhancing the external quantum efficiency (EQE) of small-sized devices.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics of Information in Matter and Center for Nanophotonics, NWO-I Institute AMOLF, Science Park 104, NL 1098XG Amsterdam, The Netherlands.
Phosphor-converted micro-light emitting diodes (micro-LEDs) are a crucial technology for display applications but face significant challenges in light extraction because of the high refractive index of the blue pump die chip. In this study, we design and experimentally demonstrate a nanophotonic approach that overcomes this issue, achieving up to a 3-fold increase in light extraction efficiency. Our approach involves engineering the local density of optical states (LDOS) to generate quasi-guided modes within the phosphor layer by strategically inserting a thin low-index spacer in combination with a metasurface for mode extraction.
View Article and Find Full Text PDFNano Lett
January 2025
Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi'an Jiaotong University, Xi'an 710049, China.
Linearly polarized micro light-emitting diodes (LP-Micro-LEDs) exhibit exceptional potential across diverse fields. The existing methods to introduce polarization to initially unpolarized Micro-LEDs and to further enhance the degree of polarization are, however, at the expense of low luminous efficiency. We fabricated a GaN-based blue Micro-LED integrated with a Al nanograting and a specially designed Ag/GaN meta-grating, which overcomes the dilemma between the luminous efficiency and polarization degree by simultaneously introducing the effects of mode selection and energy recycling.
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