We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip nonlinear optical devices. AlGaN combines compatibility with standard photonic fabrication technologies and high electro-optic modulation capabilities with low loss over a broad spectral range, from UVC to long-wave infrared, making it a viable material for complex photonic applications. In this work, we design and grow AlGaN/AlN heterostructures and integrate several photonic components. In particular, we fabricate edge couplers, low-loss waveguides, directional couplers, and tunable high-quality factor ring resonators. These devices will enable nonlinear light-matter interaction and quantum functionality. The comprehensive platform we present in this work paves the way for photon-pair generation applications, on-chip quantum frequency conversion, and fast electro-optic modulation for switching and routing classical and quantum light fields.
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http://dx.doi.org/10.1038/s44310-024-00048-z | DOI Listing |
Npj Nanophoton
January 2025
Department of Physics, Humboldt-Universität zu Berlin, Berlin, Germany.
We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip nonlinear optical devices. AlGaN combines compatibility with standard photonic fabrication technologies and high electro-optic modulation capabilities with low loss over a broad spectral range, from UVC to long-wave infrared, making it a viable material for complex photonic applications. In this work, we design and grow AlGaN/AlN heterostructures and integrate several photonic components.
View Article and Find Full Text PDFNanomaterials (Basel)
August 2023
Université Côte d'Azur, Centre National de la Recherche Scientifique (CNRS), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), 06560 Valbonne, France.
Aluminium Gallium Nitride (AlGaN) quantum dots (QDs) with thin sub-µm AlGaN layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN layer was grown on h-BN and the surface roughness was investigated by atomic force microscopy for different deposited thicknesses. It was shown that for thicker AlN layers (i.
View Article and Find Full Text PDFNanomicro Lett
February 2021
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm) of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique.
View Article and Find Full Text PDFAdv Mater
September 2016
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
The piezotronic effect is applied to modulate the physical properties of heterojunction electron gas and thus tune the electric transport in AlGaN/AlN/GaN heterostructure microwires. At room temperature, the conductance is increased by 165% under -1.78% compressive strains, and reduced by 48% under 1.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!