Reducing nonradiative recombination is crucial for minimizing voltage losses in metal-halide perovskite solar cells and achieving high power conversion efficiencies. Photoluminescence spectroscopy on complete or partial perovskite solar cell stacks is often used to quantify and disentangle bulk and interface contributions to nonradiative losses. Accurately determining the intrinsic loss in a perovskite layer is key to analyzing the origins of nonradiative recombination and developing defect engineering strategies. Here, we study perovskite films on glass and indium-tin-oxide-covered glass substrates, functionalized with a range of different molecules, using absolute and transient photoluminescence. We find that grafting these substrates with 1,6-hexylenediphosphonic acid (HDPA) effectively reduces the nonradiative losses in perovskite films for a series of perovskite semiconductors with bandgaps ranging from 1.26 to 2.28 eV. The results suggest that perovskites processed on HDPA-functionalized substrates suffer the least from nonradiative recombination and thus approach the properties of a defect-free semiconductor.
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