A method to determine electron temperature within a plasma by the spectral analysis of atomic tungsten emission has been explored. The technique was applied to a post-discharge region immediately following a high voltage nanosecond pulsed discharge in air with tungsten electrodes. Atomic tungsten lines are readily observed in the weak emission spectrum within the post-discharge region for many microseconds. Intensity ratios were measured at various times after the pulsed discharge for a select pair of neutral tungsten emission lines at 400.88 and 401.52 nm, where the upper electronic levels of each transition are at 3.46 and 5.52 eV respectively. This significant difference in upper state energy causes their line intensity ratio to vary as the electron temperature changes. In addition to the emission spectra, the absolute electron temperature could be accurately measured in our lab using laser Thomson scattering to calibrate the new tungsten emission line intensity ratio method. An analysis is presented that calculates electron temperature from these tungsten emission data assuming a Maxwellian electron energy distribution contributing to direct electron impact excitation to the upper states of each transition. The results included the derivation of a calibration factor between the two experimental methods representing a previously unreported ratio of Einstein A coefficients for the 400.88-401.52 nm transitions. This derivation provides a method for future measurement of absolute electron temperature by the 400.88-401.52 nm tungsten line intensity ratio without the need for laser Thomson scattering calibration.
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http://dx.doi.org/10.1063/5.0238579 | DOI Listing |
Vision Res
January 2025
Instituto de Biofísica Carlos Chagas Filho, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, Brazil.
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Department of Chemistry, Indian Institute of Technology Palakkad, Palakkad, Kerala 678 623, India.
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January 2025
State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China.
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Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
Porous lead iodide (PbI) film is crucial for the complete reaction between PbI and ammonium salts in sequential-deposition technology so as to achieve high crystallinity perovskite film. Herein, it is found that the tensile stress in tin (IV) oxide (SnO) electron transport layer (ETL) is a key factor influencing the morphology and crystallization of PbI films. Focusing on this, lithium trifluoromethanesulfonate (LiOTf) is used as an interfacial modifier in the SnO/PbI interface to decrease the tensile stress to reduce the necessary critical Gibbs free energy for PbI nuclei formation.
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Heat Stroke Treatment and Research Center of Chinese PLA General Hospital, Sanya, China.
Exertional heat stroke (EHS) is a life-threatening condition characterized by hyperthermia and multi-organ dysfunction, often associated with intestinal barrier disruption. This study evaluated the protective effects of Huoxiang Zhengqi Dropping Pills (HXZQD) against EHS in a rat model. HXZQD was administered via oral gavage at low, medium, and high doses, followed by EHS induction through exercise under high-temperature and high-humidity conditions.
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