Vacancies are crucial for the radiation resistance, strength, and ductility of high-entropy alloys (HEAs). However, complex electronic interactions resulting from chemical disorder prohibit the quantification of vacancy formation energy () and migration barriers (). Herein, we propose an electronic descriptor χ (electronegativity χ and valence-electron number ) to quantify the bonding strength of constituents on the basis of the tight-binding model, which allows us to build analytical models to achieve the site-to-site quantification of and . The descriptor χ reflects the d-band occupation, indicating the dominant role of the electronic interactions in the vacancy formation and migration of HEAs. As a size effect, local lattice distortion plays a more important role in vacancy migration than in vacancy formation. Our model establishes a universal physical picture of vacancy formation and migration, which helps to understand the radiation resistance and mechanical properties of HEAs, thereby accelerating the design of high-performance HEAs.
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