The topological magnetoelectric effect (TME) is a defining property of three-dimensional Z_{2} topological insulators that was predicted on theoretical grounds more than a decade ago, but has still not been directly measured. In this Letter we propose a strategy for direct measurement of the TME and discuss the precision of the effect in real devices with charge and spin disorder.
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Capacitive Scheme to Detect the Topological Magnetoelectric Effect.
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Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA.
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Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
Article Synopsis
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