AI Article Synopsis
- Multiferroic materials combine ferroelectricity and magnetism, making them promising for applications like magnetic memory and spin transistors.
- A new multiferroic chalcogenide semiconductor, CuMnSiTe, demonstrates unique properties such as a polar monoclinic crystal structure and canted antiferromagnetism below 35 K, along with significant magnetoelectric coupling.
- Observations include high electric polarization at low temperatures and the potential for room-temperature ferroelectricity, marking it as a significant advancement in multiferroic materials research.
Article Abstract
Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor CuMnSiTe (0.04 ≤ ≤ 0.26; 0.03 ≤ ≤ 0.15), which crystallizes in a polar monoclinic structure ( space group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11691694 | PMC |
| http://dx.doi.org/10.1126/sciadv.adp9379 | DOI Listing |
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