By employing the stabilizer in the supersonic gas nozzle to produce the plasma density profile with a sharp downramp, we have experimentally demonstrated highly stable electron beam acceleration based on the shock injection mechanism in laser wakefield acceleration with the use of a compact Ti:sapphire laser. A quasi-monoenergetic electron beam with a peak energy of 315 MeV ± 12.5 MeV per shot is generated. The electron pointing fluctuations are less than 1 mrad, which is a significant improvement over previous results. This is due to the precise control of the target density distribution and the relative distance between the shock and the laser focal position. The Particle-in-cell simulations demonstrate the sensitivity of electron acceleration to the target profile, while the computational fluid dynamics prove the stabilizer's effect on gas formation. Further developments of this scheme have the potential to deliver a high repetition rate gas target. The corresponding reproducibility of the accelerated electron beam paves the way for the realisation of compact laser plasma accelerators and the potential application of free electron lasers.
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http://dx.doi.org/10.1038/s41598-024-82304-y | DOI Listing |
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11682334 | PMC |
ACS Appl Electron Mater
December 2024
CEITEC, Brno University of Technology, Purkyňova 123, 61200 Brno, Czech Republic.
To satisfy the needs of the current technological world that demands high performance and efficiency, a deep understanding of the whole fabrication process of electronic devices based on low-dimensional materials is necessary for rapid prototyping of devices. The fabrication processes of such nanoscale devices often include exposure to an electron beam. A field effect transistor (FET) is a core device in current computation technology, and FET configuration is also commonly used for extraction of electronic properties of low-dimensional materials.
View Article and Find Full Text PDFACS Cent Sci
December 2024
Department of Chemistry and Biochemistry, University of California at Los Angeles, Los Angeles, California 90095, United States.
Electron microscopy in its various forms is one of the most powerful imaging and structural elucidation methods in nanotechnology where sample information is generally limited by random chemical and structural damage. Here we show how a well-selected chemical probe can be used to transform indiscriminate chemical damage into clean chemical processes that can be used to characterize some aspects of the interactions between high-energy electron beams and soft organic matter. Crystals of a Dewar benzene exposed to a 300 keV electron beam facilitate a clean valence-bond isomerization radical-cation chain reaction where the number of chemical events per incident electron is amplified by a factor of up to ca.
View Article and Find Full Text PDFSci Rep
December 2024
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
A ridge-loaded staggered double-vane slow-wave structure is proposed for terahertz radiation sources employing a sheet electron beam. This slow-wave structure has the advantages of enhanced electric field and energy density distribution and improved interaction impedance in the beam-wave interaction region. High-frequency characteristics are investigated for the proposed slow wave structure and compared with those of the staggered double-vane slow wave structure.
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December 2024
SANKEN (Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan.
By employing the stabilizer in the supersonic gas nozzle to produce the plasma density profile with a sharp downramp, we have experimentally demonstrated highly stable electron beam acceleration based on the shock injection mechanism in laser wakefield acceleration with the use of a compact Ti:sapphire laser. A quasi-monoenergetic electron beam with a peak energy of 315 MeV ± 12.5 MeV per shot is generated.
View Article and Find Full Text PDFSci Rep
December 2024
Department of Physics, University of Liverpool, Oxford Street, Liverpool, L69 7ZE, UK.
Topological semimetals have recently garnered widespread interest in the quantum materials research community due to their symmetry-protected surface states with dissipationless transport which have potential applications in next-generation low-power electronic devices. One such material, [Formula: see text], exhibits Dirac nodal arcs and although the topological properties of single crystals have been investigated, there have been no reports in crystalline thin film geometry. We examined the growth of [Formula: see text] heterostructures on a range of single crystals by optimizing the electron beam evaporation of Pt and Sn and studied the effect of vacuum thermal annealing on phase and crystallinity.
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