Although MoSe-based photodetectors have achieved excellent performance, the ultrafast photoresponse has limited their application as an optoelectronic synapse. In this paper, the enhancement of the rhodamine 6G molecule on the memory time of MoSe is reported. It is found that the memory time of monolayer MoSe can be obviously enhanced after assembly with rhodamine 6G exhibiting synaptic characteristics in comparison to pristine MoSe. Furthermore, the synaptic functions, including excitatory postsynaptic current, pair-pulse facilitation, short-term memory, long-term memory, "learning-experience" behavior, and tunable learning and forgetting process, can be achieved successfully. The distinctive energy-level structure of R6G and its excellent light absorption properties give MoSe access to an additional source of electrons, thus enabling the proposed MoSe/rhodamine 6G hybrid heterostructure optoelectronic synapse to provide an efficient protocol for realizing optoelectronic neuromorphic computing and enormously facilitate the advancement of neuromorphic electronics.
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http://dx.doi.org/10.1021/acsami.4c14694 | DOI Listing |
ACS Appl Mater Interfaces
December 2024
School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.
Although MoSe-based photodetectors have achieved excellent performance, the ultrafast photoresponse has limited their application as an optoelectronic synapse. In this paper, the enhancement of the rhodamine 6G molecule on the memory time of MoSe is reported. It is found that the memory time of monolayer MoSe can be obviously enhanced after assembly with rhodamine 6G exhibiting synaptic characteristics in comparison to pristine MoSe.
View Article and Find Full Text PDFACS Nano
December 2024
Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
Bilayer transition metal chalcogenides (TMDs) have gradually attracted a great deal of attention due to the higher density of states and carrier mobility than monolayer TMDs. Controlling the uniformity of the layer number is very crucial because it will intensively influence the physical properties. However, it is difficult to synthesize equal-bilayer (EB) TMDs with two identical layers via a normal layer-by-layer strategy.
View Article and Find Full Text PDFNanophotonics
February 2024
Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warszawa, Poland.
We present femtosecond pump-probe measurements of neutral and charged exciton optical response in monolayer MoSe to resonant photoexcitation of a given exciton state in the presence of 2D electron gas. We show that creation of charged exciton (X) population in a given K, K valley requires the capture of available free carriers in the opposite valley and reduces the interaction of neutral exciton (X) with the electron Fermi sea. We also observe spectral broadening of the X transition line with the increasing X population caused by efficient scattering and excitation induced dephasing.
View Article and Find Full Text PDFNanophotonics
August 2024
Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia.
Monolayers of transition metal dichalcogenides (TMDCs) demonstrate plenty of unique properties due to the band structure. Symmetry breaking brings second-order susceptibility to meaningful values resulting in the enhancement of corresponding nonlinear effects. Cooling the TMDC films to cryogenic temperatures leads to the emergence of two distinct photoluminescence peaks caused by the exciton and trion formation.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China.
Two-dimensional transition metal dichalcogenides (TMDs) with piezoelectric effects are ideal materials for future wearable devices. While enhancing the piezoelectric performance by forming vertical heterojunctions, shortcomings such as contamination at the heterojunction interface and limited built-in electric field width have been noticed. In this work, a lateral heterojunction of monolayer WSe-MoSe with type-II band alignment was employed to amplify the electromechanical optoelectronic efficiency.
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