Temperature Characterization of Perovskite LEDs by Electroluminescence.

Nano Lett

State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China.

Published: December 2024

AI Article Synopsis

  • Despite advancements in perovskite light-emitting diodes (PeLEDs), maintaining high stability is still a significant issue due to heat production during operation, which accelerates device wear.
  • Current methods like infrared thermal imaging (ITI) primarily measure the temperature of the device's surface, leaving the internal temperature of the perovskite layer unexplored.
  • This research introduces an electroluminescence (EL) analysis technique, which allows real-time tracking of the perovskite layer's temperature, providing a straightforward and effective approach to assess the temperature of PeLEDs while they are in use.

Article Abstract

Despite the rapid progress in perovskite light-emitting diodes (PeLEDs), achieving high stability remains an outstanding challenge. PeLEDs produce heat during operation, raising the temperatures, which accelerate device degradation. To determine the PeLED temperatures, a very limited number of techniques represented by infrared thermal imaging (ITI) are employed. However, ITI mainly characterizes the temperature of the exposed top surface of the device, leaving the actual temperature in the perovskite emissive layer unresolved. Here, we address this challenge by directly characterizing the temperature of the perovskite layer via an electroluminescence (EL) analysis. Model PeLEDs emitting in the near-infrared (FAPbI), red (FACsPbIBr) and green (FACsPbBr) spectral regions are tested. Urbach energies related to thermal broadening are obtained from the EL spectra, enabling real-time tracking of the perovskite emissive layer temperature under working conditions. Our results demonstrate that the EL analysis is a simple and effective method for the operando temperature characterization of PeLEDs.

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Source
http://dx.doi.org/10.1021/acs.nanolett.4c04676DOI Listing

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