CuZnSnSe (CZTSe) is a promising material for thin-film solar cells due to its suitable band gap, high absorption coefficient, and composition of earth-abundant and nontoxic elements. In this study, we prepared CZTSe thin films from Cu/SnSe and ZnSe stacks using a two-step annealing process. Initially, Cu-Sn-Se (CTSe) films were synthesized by sequential deposition and annealing of Cu and SnSe precursors in either a selenium (Se) or tin-selenium (Sn+Se) atmosphere. After the deposition of a ZnSe layer on top of CTSe films, the stack underwent a second annealing process, again in either a Se or Sn+Se atmosphere, resulting in four distinct annealing combinations: Se→Se, Sn+Se→Se, Se→Sn+Se, and Sn+Se→Sn+Se. The first annealing step enabled the formation of CTSe, while the second annealing step, performed after ZnSe deposition, led to the formation of the CZTSe phase. Comprehensive characterization including grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and electrical measurements was conducted. GIXRD and Raman analysis revealed kesterite CZTSe phase peaks, with some samples showing a split in the main peak at ∼27° (2θ), indicating the presence of CuSe and ZnSe secondary phases. SEM analysis showed the impact of Sn and Se annealing on grain size, with larger grains observed in films annealed in Sn+Se atmospheres, particularly in the second heat treatment process. EDS results displayed consistent elemental composition across samples, with varying Cu/(Zn+Sn), Zn/Sn and Se/metal ratios influencing the band gap values from 1.09 to 1.63 eV. Hall measurements indicated p-type conductivity with carrier concentrations between 10 and 10 cm. These results highlight the effectiveness of our two-step annealing process, particularly the Sn+Se atmosphere, in optimizing CZTSe thin films for potential use in high-efficiency thin-film solar cells.
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http://dx.doi.org/10.1021/acs.inorgchem.4c04082 | DOI Listing |
Inorg Chem
December 2024
Laboratory of Complex Heterostructures and Multifunctional Materials, National Institute of Materials Physics, Atomistilor 405A, Magurele 077125, Romania.
CuZnSnSe (CZTSe) is a promising material for thin-film solar cells due to its suitable band gap, high absorption coefficient, and composition of earth-abundant and nontoxic elements. In this study, we prepared CZTSe thin films from Cu/SnSe and ZnSe stacks using a two-step annealing process. Initially, Cu-Sn-Se (CTSe) films were synthesized by sequential deposition and annealing of Cu and SnSe precursors in either a selenium (Se) or tin-selenium (Sn+Se) atmosphere.
View Article and Find Full Text PDFJ Phys Chem C Nanomater Interfaces
October 2024
Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Karlsruhe 76131, Germany.
Phonons play a crucial role in thermalization and non-radiative recombination losses in semiconductors, impacting the power conversion efficiency of solar cells. To shed light on the lattice dynamics in CuZnSn(S ,Se ) (CZTSSe) thin-film solar cells and validate the extensive number of theoretical studies, we determine the Sn-partial phonon density of states (Sn-PDOS) by nuclear inelastic X-ray scattering. CZTSSe-based devices, one with near-stoichiometric and two with off-stoichiometric compositions, are investigated, and the results are correlated with the corresponding power conversion efficiencies (PCEs) of 3.
View Article and Find Full Text PDFJ Chem Phys
September 2024
Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, China.
It is still critical to prepare a high-quality absorber layer for high-performance Cu2ZnSnSe4 (CZTSe) multi-component thin film solar cell. The gas pressure during the selenization process is commonly referred to as the pressure of inert gas in the tube furnace, while the exact selenium partial pressure is difficult to be controlled. Therefore, the grain growth under different selenium partial pressures cannot be made clear, and the film quality cannot be controlled as well.
View Article and Find Full Text PDFMaterials (Basel)
January 2023
Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.
Despite the improved conversion efficiency of Cu(ZnSn)Se (CZTSe) solar cells, their roll-to-roll fabrication nonetheless leads to low performance. The selenization time and temperature are typically considered major parameters for a powder-based CZTSe film; meanwhile, the importance of the densification during the roll-to-roll process is often overlooked. The densification process is related to the porosity of the light-absorbing layer, where high porosity lowers cell performance.
View Article and Find Full Text PDFHeliyon
November 2022
Department of Electrical and Electronic Engineering, University of Liberal Arts Bangladesh, Dhaka 1207, Bangladesh.
In this work, an ultra-thin (0.815 μm) lead-free all-inorganic novel PV cell structure consisting of solid-state layers with the configuration SnO/ZnOS/CsGeI/CZTSe/Au has been optimized using SCAPS-1D simulator. ZnOS electron transport layer (ETL) has been deployed and various hole transport layer (HTL) material candidates have been considered to find the most suitable one in order to get the maximum possible power conversion efficiency .
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