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Direct Observation of a Photoinduced Topological Phase Transition in Bi-Doped (Pb,Sn)Se. | LitMetric

AI Article Synopsis

  • * The study uses advanced photoemission spectroscopy to observe changes in the electronic structure of Bi_{y}(Pb_{1-x}Sn_{x})_{1-y}Se(111) films, transitioning from topological to trivial insulators after laser excitation.
  • * Results show that near-infrared laser pulses can create a gap in the topological surface state, demonstrating the ability to control material properties through optical means on extremely fast timescales.

Article Abstract

Ultrafast photoexcitation offers a novel approach to manipulating quantum materials. One of the long-standing goals in this field is to achieve optical control over topological properties. However, the impact on their electronic structures, which host gapless surface states, has yet to be directly observed. Here, using time- and angle-resolved photoemission spectroscopy, we visualize the photoinduced evolution of the band structure in Bi_{y}(Pb_{1-x}Sn_{x})_{1-y}Se(111) films from topological to trivial insulators. Following near-infrared ultrafast laser excitation, we observe that the topological surface state opens a substantial gap of up to 0.1 eV. Considering the topological phase diagram associated with lattice distortion and atomic displacement, we show that a uniaxial strain generated by the ultrafast optical pulse is sufficiently effective and strong for the observed topological phase transition. Our Letter highlights the potential of optical tuning of materials through laser excitation to control topological properties on ultrafast timescales.

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Source
http://dx.doi.org/10.1103/PhysRevLett.133.236601DOI Listing

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