Density functional theory calculations and a finite deformation method are used to calculate second- and, most notably, third-order elastic constants of amorphous silicon and amorphous silicon dioxide, as represented by model structures generated via melt-quench force-field molecular dynamics simulations. Linear and nonlinear elastic constants are used to deduce macroscopic elastic moduli, such as the bulk and shear moduli, their pressure derivatives, and the elastic Grüneisen parameter. Our calculations show that the elastic properties of amorphous silicon reach the isotropic elastic limit within the nanometer length scale, attaining characteristics, both linear and nonlinear, comparable to those of crystalline silicon. In contrast, the nonlinear elastic properties of silica retain an anisotropic character over the nanometer length scales, yielding nonetheless the expected pressure-induced softening of the elastic moduli. This atypical elastic behavior is correlated to the occurrence of long-wavelength acoustic modes with negative Grüneisen parameters.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11648081 | PMC |
http://dx.doi.org/10.1021/acs.jpcc.4c06550 | DOI Listing |
Light Sci Appl
January 2025
Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
We propose and demonstrate a data-driven plasmonic metascreen that efficiently absorbs incident light over a wide spectral range in an ultra-thin silicon film. By embedding a double-nanoring silver array within a 20 nm ultrathin amorphous silicon (a-Si) layer, we achieve a significant enhancement of light absorption. This enhancement arises from the interaction between the resonant cavity modes and localized plasmonic modes, requiring precise tuning of plasmon resonances to match the absorption region of the silicon active layer.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
National Key Laboratory of Science and Technology on High-Strength Structural Materials, Central South University, Changsha 410083, China.
Silicon oxycarbide (SiOC), Ca- and Mg-modified silicon oxycarbide (SiCaOC and SiMgOC) were synthesized via sol-gel processing with subsequent pyrolysis in an inert gas atmosphere. The physicochemical structures of the materials were characterized by XRD, SEM, FTIR, and Si MAS NMR. Biocompatibility and in vitro bioactivity were detected by MTT, cell adhesion assay, and simulated body fluid (SBF) immersion test.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China.
For silicon-based devices using dielectric oxides doped with rare earth ions, their electroluminescence (EL) performance relies on the sufficient carrier injection. In this work, the atomic GaO layers are inserted within the Er-doped GeO nanofilms fabricated by atomic layer deposition (ALD). Both Ga(CH) and Ga(CH) could realize the ALD growth of GaO onto the as-deposited GeO nanofilm with unaffected deposition rates.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong 518107, P.R. China.
Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring TCOs. However, no promising industrial solution has been obtained yet.
View Article and Find Full Text PDFSci Rep
December 2024
Department of Theoretical Electrical Engineering and Diagnostics of Electrical Equipment, Institute of Electrodynamics, National Academy of Sciences of Ukraine, Beresteyskiy, 56, Kyiv-57, 03680, Ukraine.
An energy material has been developed using a one-step chemical reduction method, incorporating silver nanoparticles (AgNPs) that encapsulate micro-sized silicon (mSi) flakes. SEM investigation revealed complete encapsulation of silicon flakes by AgNP's dendritic structure, EDX confirmed the deposition of Ag on Si flakes. Raman spectroscopy confirmed the formation of silver and silicon oxides.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!