Given the immense potential for addressing energy and environmental issues, the utilization of solar energy for hydrogen production by water splitting (WS) has garnered widespread attention in the scientific community. Perovskite oxides (POs), with their compositional flexibility and structural stability, hold significant promise in the photocatalytic hydrogen evolution reaction (HER). Rational doping of POs is the key to enhancing the rate of the photocatalytic HER. In this review, with the aim of providing guidance for the enhancement of photocatalytic efficiency, the recent advancements in ion-doping engineering of PO-based photocatalysts are summarized. The principles of photocatalytic WS, the preparation methods of ion-doped POs, the types of dopants, and the effects of doping on the photocatalytic performance of the HER are systematically reviewed and discussed. Background and advances in practical applications are further elaborated. Ultimately, prospects and challenges of the doped POs for the photocatalytic HER are proposed. This review provides a good reference for making informed decisions regarding the selection of doped ions and a valuable suggestion for establishing high-stability photocatalytic systems toward large-scale applications.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1039/d4cp03622k | DOI Listing |
ChemSusChem
January 2025
Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P.R. China.
Inverted perovskite solar cells (IPSCs) utilizing nickel oxide (NiO) as hole transport material have made great progress, driven by improvements in materials and interface engineering. However, challenges remain due to the low intrinsic conductivity of NiO and inefficient hole transport. In this study, we introduced MoS nanoparticles at the indium tin oxide (ITO) /NiO interface to enhance the ITO surface and optimize the deposition of NiO, resulting in increased conductivity linked to a ratio of Ni:Ni.
View Article and Find Full Text PDFRSC Adv
January 2025
School of Materials and Chemical Engineering, Chuzhou University Chuzhou Anhui 239000 China
This study successfully prepared La Ce CoO ( = 0.2, 0.4, 0.
View Article and Find Full Text PDFChem Mater
January 2025
Department of Chemistry and Nanoscience Center, University of Copenhagen, 2100 Copenhagen Ø, Denmark.
Bismuth ferrites, specifically perovskite-type BiFeO and mullite-type BiFeO, hold significant technological promise as catalysts, photovoltaics, and room-temperature multiferroics. However, challenges arise due to their frequent cocrystallization, particularly in the nanoregime, hindering the production of phase-pure materials. This study unveils a controlled sol-gel crystallization approach, elucidating the phase formation complexities in the bismuth ferrite oxide system by coupling thermochemical analysis and total scattering with pair distribution function analysis.
View Article and Find Full Text PDFACS Omega
January 2025
Centro de Investigación en Materiales Avanzados, S.C. (CIMAV Subsede Monterrey), Alianza Norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66628 Apodaca, Nuevo León, Mexico.
Thermal atomic layer deposition (TALD) and plasma atomic layer deposition (PALD) were used for producing thin NiO films from nickel(II) acetylacetonate Ni(acac), employing different oxidizing agents (deionized water HO, ozone O, and molecular oxygen O). The films were deposited at 300 °C (TALD) and 220 °C (PALD) over glass substrates; their physical and chemical properties were considerably influenced by the choice of oxidizing agents. In particular, ALD(HO) samples had a low growth per cycle (GPC) and a high concentration of defects.
View Article and Find Full Text PDFAdv Mater
January 2025
Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
HfO/ZrO-based ferroelectrics present tremendous potential for next-generation non-volatile memory due to their high scalability and compatibility with silicon technology. Unlike the continuous polar layers in perovskite ferroelectrics, HfO/ZrO-based ferroelectrics are composed of alternating polar layers with oxygen shifts and non-polar spacers, which leads to a distinct ferroelectric switching mechanism. However, directly observing the switching process has been a big challenge due to the polymorph feature of nanoscale fluorites and the difficulty in in situ imaging on light elements.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!