AI Article Synopsis
- A new inorganic multilayer barrier film was created on polyethylene naphthalate (PEN) using advanced deposition techniques, combining a SiO layer from ICP-CVD and an AlO/ZnO nanolaminate from PEALD.
- The resulting film has impressive optical transmittance of 88.1% and low water vapor permeability of 3.3 × 10 g/m/day, demonstrating effective collaboration between the two growth methods.
- The study indicates that the PEALD layer repairs defects in the SiO layer and the multilayer structure enhances performance, making it suitable for long-lasting organic electronic device encapsulation.
Article Abstract
In this study, an inorganic multilayer barrier film was fabricated on the polyethylene naphthalate (PEN) substrate, which was composed of a SiO layer prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and a AlO/ZnO nanolaminate produced by plasma-enhanced atomic layer deposition (PEALD). The multilayer composite film with a structure of 50 nm SiO + (4.5 nm AlO/6 nm ZnO) × 4 has excellent optical transmittance (88.1%) and extremely low water vapor permeability (3.3 × 10 g/m/day, 38 °C, 90% RH), indicating the cooperation of the two advanced film growth methods. The results suggest that the defects of the SiO layer prepared by ICP-CVD were effectively repaired by the PEALD layer, which has excellent defect coverage. And AlO/ZnO nanolaminates have advantages over single-layer AlO due to their complex diffusion pathways. The multilayer barrier film offers potential for encapsulating organic electronic devices that require a longer lifespan.
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Source |
|---|---|
| http://dx.doi.org/10.3390/ma17236007 | DOI Listing |
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11643419 | PMC |
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