Giant Ultrabroadband Bulk Photovoltaic Effect Engendered by Two-Photon Absorption in α-InSe for Chiral Terahertz Wave Generation.

Adv Mater

Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, P. R. China.

Published: December 2024

Bulk photovoltaic effect (BPVE) can break the Shockley-Queisser limit by leveraging the inherent asymmetry of crystal lattice without a junction. However, this effect is mainly confined to UV-vis spectrum due to the wide-bandgap nature of traditional ferroelectric materials, thereby limiting the exploration of the infrared light-driven efficient BPVE. Herein, giant two-photon absorption (TPA) driven BPVE is uncovered from visible to infrared in ferroelectric α-InSe utilizing wavelength-tunable terahertz (THz) emission spectroscopy. Remarkably, α-InSe exhibits exceptional THz emission efficiency in the infrared region, surpassing renowned THz emitters like p-InAs and achieving an efficiency approximately eight times the magnitude of standard ZnTe. The power exponent-type pump fluence and quadruple polarization features reveal a unique TPA-driven BPVE, corroborated by a fourth-order nonlinear oscillator model. Notably, TPA-engendered BPVE efficiency approaches 68% of that observed in the single-photon absorption process. Moreover, the TPA responses display clear polarization anisotropy, with considerably relative phase and amplitude driven by synchronous in-plane and out-of-plane polarization, leading to chiral THz waves with high efficiency, tunable orientation, and controllable ellipticity. This work highlights the advantages of TPA-induced BPVE responses in narrow-bandgap ferroelectric semiconductors, enhancing spectral utilization efficiency, aiding high-performance devices based on BPVE, and guiding chiral THz wave design.

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Source
http://dx.doi.org/10.1002/adma.202416595DOI Listing

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