AI Article Synopsis

  • Bottom-up design of electronic materials relies on precisely controlling self-assembly, using atomically precise metal nanoclusters (NCs) as modular building blocks.
  • A new molecular silver nanocluster (0 D Ag-NC) was assembled into a one-dimensional nanocluster chain (1 D Ag-CAM) using 4,4'-bipyridine linkers, both exhibiting cuboctahedron geometries protected by organic ligands.
  • The 1 D Ag-CAM device showed superior resistive switching behavior with increased durability, a higher current ratio, and demonstrated negative differential resistance, underscoring the significance of connecting molecular nanoclusters for improved electronic memory properties.

Article Abstract

Bottom-up design of electronic materials based on nanometer-sized building blocks requires precise control over their self-assembly process. Atomically precise metal nanoclusters (NCs) are the well-characterized building blocks for crafting tunable nanomaterials. Here, a solution-processed assembly of a newly synthesized molecular silver nanocluster (0 D Ag-NC) into a 1D nanocluster chain (1 D Ag-CAM) is mediated by 4,4'-bipyridine linker Both 0 D Ag-NC and 1 D Ag-CAM consist of Ag core that adopts the cuboctahedron geometry protected by organic ligands. The resistive switching devices are fabricated in a sandwich-like structure of ITO (Indium tin oxide)/X/Ag (where X is either 0 D Ag-NC or 1 D Ag-CAM). The device based on 1 D Ag-CAM exhibited excellent resistive switching behaviour, enduring up to 1000 cycles and boasting a fivefold higher I/I ratio compared to the device based on the molecular 0 D Ag-NC nanocluster. Furthermore, the device based on 1 D Ag-CAM demonstrated negative differential resistance (NDR) phenomena, achieving a peak-to-valley ratio of 2.34 with a switching efficiency of 23 Ns. This work highlights the importance of interconnecting molecular nanoclusters into 1D nanocluster chains for fine-tuning resistive memory properties in futuristic electronic appliances.

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http://dx.doi.org/10.1002/smll.202409118DOI Listing

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