Vertically stacked van der Waals (vdW) heterostructures not only provide a promising platform in terms of band alignment, but also constitute fertile ground for fundamental science and attract tremendous practical interest towards their use in various device applications. Beyond most two-dimensional (2D) materials, which are intrinsically non-magnetic, CrI is a novel material with magnetism dependent on its vdW-bonded layers, promising potential spintronics applications. However, for particular device applications, a heterostructure is commonly fabricated and it is necessary to examine the effect of the interface or contact atoms on the magnetic properties of the heterostructure. Most importantly, the effect of assembly stress on the electronic and magnetic properties remains unclear. In this study, we design a vdW heterostructure from two-chromium tri-halides, namely the CrI/BrCrI heterostructure, where the Janus equivalent of the CrI monolayer, BrCrI, is also an intrinsically magnetic 2D material. Using state-of-the-art first-principles calculations, we uncover the effects of the contact atoms, as well as external pressure, on the electronic and magnetic properties of the CrI/BrCrI heterostructure. It is found that the heterostructure transitions from an antiferromagnetic (AFM) to ferromagnetic (FM) ground state with pressure larger than certain threshold. We also investigate the magneto-crystalline anisotropy energy (MAE) of the CrI/BrCrI heterostructure. Remarkably, it is found that the MAE is significantly influenced by both the stacking and the contact atoms, varying abruptly and inconsistently with the contact atoms and external pressure. Further, we also reveal a correlation between the MAE and the polar angle. The pressure-regulated magnetic properties of the CrI/BrCrI heterostructure as revealed in this study highlight its potential applications in spintronic devices.
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http://dx.doi.org/10.1039/d4cp02066a | DOI Listing |
Phys Chem Chem Phys
December 2024
State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
Vertically stacked van der Waals (vdW) heterostructures not only provide a promising platform in terms of band alignment, but also constitute fertile ground for fundamental science and attract tremendous practical interest towards their use in various device applications. Beyond most two-dimensional (2D) materials, which are intrinsically non-magnetic, CrI is a novel material with magnetism dependent on its vdW-bonded layers, promising potential spintronics applications. However, for particular device applications, a heterostructure is commonly fabricated and it is necessary to examine the effect of the interface or contact atoms on the magnetic properties of the heterostructure.
View Article and Find Full Text PDFAdv Mater
November 2024
National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Controlling exchange bias (EB) by electric fields is crucial for next-generation magnetic random access memories and spintronics with ultralow energy consumption and ultrahigh speed. Multiferroic heterostructures have been traditionally used to electrically control EB and interfacial ferromagnetism through weak/indirect coupling between ferromagnetic and ferroelectric films. However, three major bottlenecks (lattice mismatch, interface defects, and weak/indirect coupling in multiferroic heterostructures) remain, resulting in only a few tens of milli-tesla EB field.
View Article and Find Full Text PDFNat Commun
September 2024
Department of Physics, University of Florida, Gainesville, FL, USA.
ACS Nano
September 2024
State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN-FLG-CrI-WSe-FLG-hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN-FLG-CrI-FLG-hBN heterostructure was also fabricated on identical CrI and FLGs for better comparison.
View Article and Find Full Text PDFPhys Chem Chem Phys
September 2024
College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
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