Optoelectronic devices with imaging and recognition capabilities are crucial for developing artificial visual system (AVS). Bias-switchable photodetection and photosynaptic devices have been developed using 2D perovskite oxide/organic heterojunctions. This unique structure allows for modulated carrier dynamics under varied bias conditions, enabling the devices to function as photodetectors without bias and as photosynapses with bias. At zero bias, the device achieves high responsivity (≈0.36 A W at 320 nm) and rapid response speed (0.57 s). Under a -0.5 V bias, it exhibits persistent photoconductivity (PPC), resulting in neuromorphic synaptic behaviors with a paired-pulse facilitation (PPF) index exceeding 300%. Moreover, an 8 × 8 sensor array demonstrates image sensing and memory capabilities, showing in situ enhanced imaging when switching the bias from 0 to -0.5 V, and over 200 s of image memory. The image processing and recognition abilities are further explored by constructing an AVS using a 28 × 28 device array combined with an artificial neural network (ANN). The adjustable synaptic weight under different reverse biases allowed for optimized simulated recognition, achieving an accuracy of 92% after 160 training epochs. This work presents a novel method for creating dual-functional photodetection and photosynaptic devices, paving the way for a more integrated and efficient AVS.
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http://dx.doi.org/10.1002/adma.202416033 | DOI Listing |
Adv Mater
December 2024
Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China.
Optoelectronic devices with imaging and recognition capabilities are crucial for developing artificial visual system (AVS). Bias-switchable photodetection and photosynaptic devices have been developed using 2D perovskite oxide/organic heterojunctions. This unique structure allows for modulated carrier dynamics under varied bias conditions, enabling the devices to function as photodetectors without bias and as photosynapses with bias.
View Article and Find Full Text PDFAdv Mater
August 2022
Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China.
Polarization-resolved photodetection in a compact footprint is of great interest for ultraminiaturized polarimeters to be used in a wide range of applications. However, probing the states of polarization (SOP) in materials with natural anisotropy are usually weak, limited by the material's natural dichroism or diattenuation. Here, a twisted unipolar-barrier van der Waals heterostructure (vdWH) to construct a bias-switchable polarization detection for retrieval of full SOP (from 0 to 180°) for linear polarized incident light is reported.
View Article and Find Full Text PDFNanotechnology
June 2018
Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials-Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics & Electronic Sciences, Hubei University, Wuhan 430062, People's Republic of China. i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, Jiangsu, People's Republic of China.
Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS, FePS, etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS has been comprehensively investigated.
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