Protocol for depositing transparent conductive Ta-doped SnO film by hollow cathode gas flow sputtering technology.

STAR Protoc

Institute für High-Frequency and Semiconductor-System Technologies, Technische Universität Berlin, Einsteinufer 25, 10587 Berlin, Germany. Electronic address:

Published: December 2024

AI Article Synopsis

  • A new transparent conductive material, Ta-doped SnO (SnO: Ta), is highlighted as a promising substitute for traditional transparent conductive oxides (TCOs) due to its low surface roughness and low resistivity.
  • The text outlines a specific method for creating tin oxide films using hollow cathode gas flow sputtering technology, covering the preparation and cleaning of substrates as well as the deposition process.
  • Additionally, it provides guidance for measuring the optical and electrical properties of the resulting films, referencing more detailed procedures from the work of Huo et al. for further information.

Article Abstract

Transparent conductive Ta-doped SnO (SnO: Ta) thin film with low surface roughness, low resistivity, and high carrier concentration is one potential alternative of commercial transparent conductive oxides (TCOs). Here, we present a protocol for fabricating tin oxide films by hollow cathode gas flow sputtering technology. We describe steps for preparing and cleaning substrate, and film deposition process on the fresh uncorroded float glass substrate. We then detail procedures for measuring the optical and electrical properties of the film. For complete details on the use and execution of this protocol, please refer to Huo et al..

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Source
http://dx.doi.org/10.1016/j.xpro.2024.103489DOI Listing

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