Switchable Photovoltaic Effect Induced by Light Intensity.

ACS Nano

School of Engineering Science, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada.

Published: December 2024

AI Article Synopsis

  • - The study presents a method to switch photovoltaic polarity in MoS Schottky photodiodes using the intensity of incident light, expanding on existing techniques that rely on gate voltage or optical wavelength.
  • - The observed polarity switching occurs due to the trapping of photogenerated holes at the interface, which affects the Schottky barrier height asymmetrically.
  • - Additionally, the researchers developed a single device that functions as a bidirectional optoelectronic logic gate, capable of performing both "AND" and "OR" operations.

Article Abstract

Photovoltaic devices capable of reversible photovoltaic polarity through external signal modulation may enable multifunctional optoelectronic systems. However, such devices are limited to those induced by gate voltage, electrical poling, or optical wavelength by using complicated device architectures. Here, we show that the photovoltaic polarity is also switchable with the intensity of incident light. The modulation in light intensity induces photovoltaic polarity switching in geometrically asymmetric MoS Schottky photodiodes, explained by the asymmetric lowering of the Schottky barrier heights due to the trapping of photogenerated holes at the MoS/Cr interface states. An applied gate voltage can further modulate the carrier concentration in the MoS channel, providing a method to tune the threshold light intensity of polarity switching. Finally, a bidirectional optoelectronic logic gate with "AND" and "OR" functions was demonstrated within a single device.

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Source
http://dx.doi.org/10.1021/acsnano.4c10392DOI Listing

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