The conventional reconfiguration of transistors requires an additional independent terminal for controllable gate input, which complicates the device structure and makes circuit integration difficult. In this work, we propose a reconfigurable diode based on a 2D layered copper indium thiophosphate (CIPS) and graphene (Gr) van der Waals lateral heterojunction, exhibiting distinctively bias-dependent reconfiguration. The reconfiguration characteristics include reversible memristive behaviors with a current on/off ratio of about 10 and switchable rectifying polarity with a rectifying ratio of up to 3 × 10. This reconfigurable mechanism arises from the lateral bias-induced migration of Cu ions, effectively modulating the barrier height at the CIPS and Gr interface. This work provides a simplified reconfigurable solution for electrostatically modulated circuits.
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