The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 10 nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth, sidewall passivation, efficient photon extraction, and elegant bonding technologies, and promises significant advantages for augmented and virtual reality devices, wearables, and next-generation consumer electronics.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11621698 | PMC |
| http://dx.doi.org/10.1038/s41377-024-01683-z | DOI Listing |
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