AI Article Synopsis

  • The study investigates the spectroscopy of shallow donors in a CdTe/(Cd, Mg)Te structure, which helps test theoretical semiconductor models.
  • Measurements were taken at low temperatures (4.2 K) and under strong magnetic fields, focusing on the photocurrent generated by far-infrared photons.
  • The observed spectra show unexpected behaviors that don’t match traditional theories, leading to a new model that combines electrostatic fluctuations and magnetic field effects on electron localization.

Article Abstract

Spectroscopy of shallow donors is a tool to test theoretical models and to reveal properties of semiconductors. In this work we consider intra-shallow impurity transitions by studying a CdTe/(Cd, Mg)Te structure grown by a molecular beam epitaxy in which both a CdTe quantum well and (Cd, Mg)Te barries are uniformly doped with iodine donors. Measurements of a photocurrent (PC) at the far-infrared were carried out at 4.2 K and magnetic fields up to 7 T with the energy of photons originated from a molecular laser in the range 2.2 meV-12.8 meV. Spectra (a PC signal vs. , at a constant energy of photons) show lines which position does not depend on the photon energy but shifts with the in-plane electric field. These dependencies, which do not follow a well-established picture of shallow donor magnetospectroscopy in quantum wells, are explained within a model which unifies the role of fluctuations of the electrostatic potential and a magnetic-field induced electron localization.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11501144PMC
http://dx.doi.org/10.1515/nanoph-2023-0689DOI Listing

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Article Synopsis
  • The study investigates the spectroscopy of shallow donors in a CdTe/(Cd, Mg)Te structure, which helps test theoretical semiconductor models.
  • Measurements were taken at low temperatures (4.2 K) and under strong magnetic fields, focusing on the photocurrent generated by far-infrared photons.
  • The observed spectra show unexpected behaviors that don’t match traditional theories, leading to a new model that combines electrostatic fluctuations and magnetic field effects on electron localization.
View Article and Find Full Text PDF

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