Topological insulators (TI), as a kind of fantastic nanomaterial with excellent electrical and optical properties, have attracted particular attention due to the promising applications in optoelectronic devices. Herein, we experimentally demonstrated the interaction between light and molybdenum disulfide (MoS) monolayer with an antimony telluride (SbTe) TI nanoparticle. It was found that photoluminescence (PL) emission and Raman scattering signal can be boosted by 5 and 8 folds in MoS monolayer integrated with the TI nanoparticle, respectively. The measured and simulated dark-field scattering spectra illustrated that the enhancement of light-matter interaction could be derived from the generation of localized surface plasmons on the TI nanoparticle with distinctly boosted electric field. We also found that there exists a redshift of 5 nm for the enhanced PL peak, which could be attributed to the formation of trions in MoS induced by plasmon doping. This work would provide a new pathway for the applications of TI nanoparticles in the optoelectronics, especially light-matter interaction enhancement.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11501669 | PMC |
| http://dx.doi.org/10.1515/nanoph-2021-0685 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Monolayer MoS with S vacancy defects doped with Group V non-metallic elements (N, P, As): a first-principles study.
J Mol Model
January 2025
Nanjing Hydraulic Research Institute, Shanghai, China.
Context: This study systematically investigated the effects of single S-atom vacancy defects and composite defects (vacancy combined with doping) on the properties of MoS using density functional theory. The results revealed that N-doped S-vacancy MoS has the smallest composite defect formation energy, indicating its highest stability. Doping maintained the direct band gap characteristic, with shifts in the valence band top.
View Article and Find Full Text PDFInterfacial Atomic Mechanisms of Single-Crystalline MoS Epitaxy on Sapphire.
Adv Mater
January 2025
School of Engineering, Westlake University, Hangzhou, 310030, China.
The epitaxial growth of molybdenum disulfide (MoS₂) on sapphire substrates enables the formation of single-crystalline monolayer MoS₂ with exceptional material properties on a wafer scale. Despite this achievement, the underlying growth mechanisms remain a subject of debate. The epitaxial interface is critical for understanding these mechanisms, yet its exact atomic configuration has previously been unclear.
View Article and Find Full Text PDFSulfur isotope engineering in heterostructures of transition metal dichalcogenides.
Nanoscale Adv
January 2025
Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University Ke Karlovu 5, 12116, Prague 2 Czech Republic
Heterostructuring of two-dimensional materials offers a robust platform to precisely tune optoelectronic properties through interlayer interactions. Here we achieved a strong interlayer coupling in a double-layered heterostructure of sulfur isotope-modified adjacent MoS monolayers two-step chemical vapor deposition growth. The strong interlayer coupling in the MoS(S)/MoS(S) was affirmed by low-frequency shear and breathing modes in the Raman spectra.
View Article and Find Full Text PDFProton-Controlled Electron Injection in MoS During Hydrogen Evolution Revealed by Time-Resolved Spectroelectrochemistry.
J Am Chem Soc
January 2025
State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.
Monolayer MoS is an effective electrocatalyst for the hydrogen evolution reaction (HER). Despite significant efforts to optimize the active sites, its catalytic performance still falls short of theoretical predictions. One key factor that has often been overlooked is the electron injection from the conductive substrate into the MoS.
View Article and Find Full Text PDFInterfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS Transistors via Directionally Angled Etching.
ACS Nano
January 2025
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106319, Taiwan.
Edge contacts offer a significant advantage for enhancing the performance of semiconducting transition metal dichalcogenide (TMDC) devices by interfacing with the metallic contacts on the lateral side, which allows the encapsulation of all of the channel material. However, despite intense research, the fabrication of feasible electrical edge contacts to TMDCs to improve device performance remains a great challenge, as interfacial chemical characterization via conventional methods is lacking. A major bottleneck in explicitly understanding the chemical and electronic properties of the edge contact at the metal-two-dimensional (2D) semiconductor interface is the small cross section when characterizing nominally one-dimensional edge contacts.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!