The spin Hall effect of light, a phenomenon characterized by the transverse and spin dependent splitting of light at an optical interface, is highly promising for collecting precise quantitative data from interfaces and stands as an appealing option for improving precision metrology. This high level of precision is attributed to the principles of weak measurement. Since its conceptual introduction, the spin Hall effect of light has been empirically observed through weak measurement techniques, adhering closely to the initially proposed experimental configuration. Recently, it has been suggested that the setup can be downsized without compromising precision. Here, the first experimental demonstration of "compact weak measurement" is achieved by observing the spin Hall effect of both reflected and refracted light. Compared to the conventional weak measurement, this compact setup performs the same measurements but requires less free space by replacing the two convex lenses with a set of concave and convex lenses. The compact weak measurement demonstrates excellent agreement with theoretical predictions and experimental findings from traditional setups across both isotropic-isotropic and isotropic-anisotropic interfaces. The experimental validation of the compact configuration paves the way for the practical application of the spin Hall effect of light in devices with a smaller form factor.
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http://dx.doi.org/10.1515/nanoph-2024-0217 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India.
Materials exhibiting topological transport properties, such as a large topological Hall resistivity, are crucial for next-generation spintronic devices. Here, we report large topological Hall resistivities in epitaxial supermalloy (NiFeMo) thin films with [100] and [111] orientations grown on single-crystal MgO (100) and AlO (0001) substrates, respectively. While X-ray reciprocal maps confirmed the epitaxial growth of the films, X-ray stress analyses revealed large residual strains in the films, inducing tetragonal distortions of the cubic NiFeMo unit cells.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
College of Sciences, Northeastern University, Shenyang, 110819, China.
In this work, using first-principles calculations, we predict a promising class of two-dimensional ferromagnetic semiconductors, namely Janus PrXY (X ≠ Y = Cl, Br, I) monolayers. Through first-principles calculations, we found that PrXY monolayers have excellent dynamic and thermal stability, and their band structures, influenced by magnetic exchange and spin-orbital coupling, exhibit significant valley polarization. Between and - valleys, the Berry curvature values are opposite to each other, resulting in the anomalous valley Hall effect.
View Article and Find Full Text PDFProc Natl Acad Sci U S A
January 2025
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Chiral magnetic textures give rise to unconventional magnetotransport phenomena such as the topological Hall effect and nonreciprocal electronic transport. While the correspondence between topology or symmetry of chiral magnetic structures and such transport phenomena has been well established, a microscopic understanding based on the spin-dependent band structure in momentum space remains elusive. Here, we demonstrate how a chiral magnetic superstructure introduces an asymmetry in the electronic band structure and triggers a nonreciprocal electronic transport in a centrosymmetric helimagnet α-EuP.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, USA.
Unconventional spin-orbit torques arising from electric-field-generated spin currents in anisotropic materials have promising potential for spintronic applications, including for perpendicular magnetic switching in high-density memory applications. Here, all the independent elements of the spin torque conductivity tensor allowed by bulk crystal symmetries for the tetragonal conductor IrO are determined via measurements of conventional (in-plane) anti-damping torques for IrO thin films in the high-symmetry (001) and (100) orientations. It is then tested whether rotational transformations of this same tensor can predict both the conventional and unconventional anti-damping torques for IrO thin films in the lower-symmetry (101), (110), and (111) orientations, finding good agreement.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
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