Tunable magnetic and electronic properties of CrS/VS lateral superlattices.

Nanoscale

Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen 361005, China.

Published: December 2024

AI Article Synopsis

  • Two-dimensional (2D) superlattices made from transition metal dichalcogenides, like CrS and VS, display exceptional electronic and magnetic properties useful for advanced technologies.
  • The CrS/VS superlattice shows stability and magnetism, with magnetic phase transitions influenced by its size and sublattice width.
  • Electronic behavior in these superlattices varies: smaller ones create semiconductor contacts and allow for electron segregation, while larger ones restrict electronic states, resulting in different types of metal-semiconductor contacts, enhancing tunability for future spintronic devices.

Article Abstract

Two-dimensional (2D) lateral heterostructures and superlattices, especially those based on transition metal dichalcogenides, boast exceptional properties for electronics, optoelectronics, and photovoltaics. Our study delves into the intricate superlattice architecture of CrS/VS, as well as its magnetic and electronic attributes, utilizing the framework of density functional theory. The CrS/VS superlattice, crafted by seamlessly stitching together CrS and VS monolayers along their armchair interfaces, demonstrates remarkable stability and magnetism. Notably, the magnetic phase transitions exhibited by this superlattice are intricately linked to its overall size and sublattice width. Furthermore, the electronic structures of these CrS/VS superlattices exhibit a strong dependence on the widths of the CrS and VS ribbons. In smaller superlattices, spin-down electrons establish semiconductor-semiconductor contacts with a distinct type II band alignment. Conversely, spin-up electrons forge metal-metal contacts, facilitating spin-dependent 2D electron segregation. However, in larger superlattices, the electronic states are more constrained, leading to metal-semiconductor contacts that exhibit ohmic conductivity within a single spin channel. This versatility in integrating various magnetic and contact modes fosters multiple structural configurations, ushering in an exciting new paradigm characterized by significant tunability. This advancement holds immense promise for the development and application of multifunctional spintronic devices, offering a wide range of possibilities for future technological innovations.

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Source
http://dx.doi.org/10.1039/d4nr03857fDOI Listing

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