AI Article Synopsis
- The paper introduces a gate driver designed for IGBT fast switching in compact pulsed power systems, targeting applications in electromagnetic launch and food processing.
- It features a planar transformer with a unique half-turn winding that reduces leakage inductance by 31.1%, which improves the rise time of the driving voltage pulse.
- Testing showed that the gate driver can achieve a current change rate (di/dt) of about 10.10 A/ns with a gate voltage of 50 V and a charging time of 88 ns, confirming its effectiveness for rapid IGBT switching.
Article Abstract
This paper presents a magnetically isolated gate driver for the fast switching of IGBT (Insulated Gate Bipolar Transistor) in compact pulsed power sources with sharp rising edges and flat-top pulses for the application of electromagnetic launch and food processing. The proposed gate driver is implemented based on a planar transformer with a half-turn winding arrangement to increase the amplitude of the driving voltage pulse. With the half-turn winding arrangement, the leakage inductance of transformers decreases by 31.1% compared to the interleaving structure. This decrease enables a fast rise time of the driving voltage pulse. Furthermore, the gate drivers are used to drive the IGBT switching a Blumlein pulse forming network. The results show that the di/dt of the applied commercially available Si IGBT is about 10.10 A/ns with a gate voltage of 50 V and a gate capacitance charging time of about 88 ns, proving the effectiveness of the gate driver and providing a high-performance driving scheme for the fast switching of Si IGBT.
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| http://dx.doi.org/10.1063/5.0214911 | DOI Listing |
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