Twisted Magnetic Van der Waals Bilayers: An Ideal Platform for Altermagnetism.

Phys Rev Lett

Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.

Published: November 2024

We introduce a universal methodology for generating and manipulating altermagnetism in two-dimensional (2D) magnetic Van der Waals (MvdW) materials through twisting. We find that a key in-plane twofold rotational operation can be achieved in a twisted bilayer of any 2D MvdW material, which takes one of all five 2D Bravais lattices, thereby inducing altermagnetism. By choosing the constituent MvdW monolayer with specific symmetry, our approach can tailor altermagnetism of any type, such as d wave, g wave, and i wave. Furthermore, the properties of our twisted altermagnetic materials can be easily engineered. Taking a transition-metal oxyhalide VOBr as an example, we find that by tuning the twist angle and Fermi level, a giant spin Hall angle can be obtained, much larger than the experimentally reported. This approach establishes a general, robust, and adjustable platform to explore altermagnetism and provides a new efficient way to generate and manipulate the spin current.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevLett.133.206702DOI Listing

Publication Analysis

Top Keywords

magnetic van
8
van der
8
der waals
8
wave wave
8
altermagnetism
5
twisted magnetic
4
waals bilayers
4
bilayers ideal
4
ideal platform
4
platform altermagnetism
4

Similar Publications

Purpose: This study focused on reducing the margin for prostate cancer treatment using magnetic resonance imaging-guided radiotherapy by investigating the intrafractional motion of the prostate and different motion-mitigation strategies.

Methods: We retrospectively analyzed intrafractional prostate motion in 77 patients with low- to intermediate-risk prostate cancer treated with five fractions of 7.25 Gy on a 1.

View Article and Find Full Text PDF

Resolving and routing magnetic polymorphs in a 2D layered antiferromagnet.

Nat Mater

January 2025

State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai, China.

Polymorphism, commonly denoting diverse molecular or crystal structures, is crucial in the natural sciences. In van der Waals antiferromagnets, a new type of magnetic polymorphism arises, presenting multiple layer-selective magnetic structures with identical total magnetization. However, resolving and manipulating such magnetic polymorphs remain challenging.

View Article and Find Full Text PDF

A systematic review of deep learning in MRI-based cerebral vascular occlusion-based brain diseases.

Neuroscience

January 2025

Department of Computer Engineering, Faculty of Engineering, Igdir University, 76000, Igdir, Turkey. Electronic address:

Neurological disorders, including cerebral vascular occlusions and strokes, present a major global health challenge due to their high mortality rates and long-term disabilities. Early diagnosis, particularly within the first hours, is crucial for preventing irreversible damage and improving patient outcomes. Although neuroimaging techniques like magnetic resonance imaging (MRI) have advanced significantly, traditional methods often fail to fully capture the complexity of brain lesions.

View Article and Find Full Text PDF

The anisotropic properties of materials profoundly influence their electronic, magnetic, optical, and mechanical behaviors and are critical for a wide range of applications. In this study, the anisotropic characteristics of Ni-based van der Waals materials, specifically NiTe and its alloy NiTeSe, utilizing a combination of comprehensive scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations, are explored. Unlike 1T-NiTe, which exhibits trigonal in-plane symmetry, the substitution of Te with Se in NiTe (resulting in the NiTeSe alloy) induces a pronounced in-plane anisotropy.

View Article and Find Full Text PDF

Two-Dimensional Nonvolatile Valley Spin Valve.

ACS Nano

January 2025

Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States.

A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission, controlled by the relative alignment of magnetic moments of the two ferromagnetic layers. Recently, the advent of valleytronics has conceptualized a valley spin valve (VSV)─a device that utilizes the valley degree of freedom and spin-valley locking to achieve a similar valve effect without relying on magnetism. In this study, we propose a nonvolatile VSV (-VSV) based on a two-dimensional (2D) ferroelectric semiconductor where resistance of -VSV is controlled by a ferroelectric domain wall between two uniformly polarized domains.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!