Among various types of memory, working memory (WM) plays a crucial role in reasoning, decision-making, and behavior regulation. Neuromorphic computing is a well-established engineering approach that offers promising avenues for advancing our understanding of WM processes by mimicking the structure and operation of the human brain using electronic technology. In this work, a digital neuromorphic system is proposed and then implemented in hardware to illustrate the real-time WM process based on the spiking neuron-astrocyte network (SNAN). The implemented SNAN utilizes a bidirectional neuron-astrocyte interaction to realize the WM process, allowing for a more brain-like memory emulation. Various hardware optimization methods, including piecewise linear approximation, double buffering, and time multiplexing are recruited to minimize the area and power consumption and facilitate the implementation of the WM concept on a single field programmable gate array (FPGA) chip. The proposed neuromorphic system is evaluated by testing its capacity for multi-item memory formation, an essential characteristic of human WM. The results show that the time duration between the store and recall phases is a critical parameter for acceptable retrieval performance. Additionally, the results demonstrate that the proposed neuromorphic system for WM is resilient to noise. Finally, the design modularity of the system facilitates easy extension for implementing larger networks and adapting to real-world applications.
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http://dx.doi.org/10.1016/j.neunet.2024.106934 | DOI Listing |
Nano Lett
January 2025
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 91120 Palaiseau, France.
Multifunctional hardware technologies for neuromorphic computing are essential for replicating the complexity of biological neural systems, thereby improving the performance of artificial synapses and neurons. Integrating ionic and spintronic technologies offers new degrees of freedom to modulate synaptic potentiation and depression, introducing novel magnetic functionalities alongside the established ionic analogue behavior. We demonstrate that magneto-ionic devices can perform as synaptic elements with dynamically tunable depression linearity controlled by an external magnetic field, a functionality reminiscent of neuromodulation in biological systems.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.
Controlling the Mott transition through strain engineering is crucial for advancing the development of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of microscopic distortions on the local Mott transition. Here, using a synchrotron-based scanning X-ray nanoprobe, we studied the real-space structural heterogeneity during the structural phase transition in a VO thin film.
View Article and Find Full Text PDFResearch (Wash D C)
January 2025
Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics, Northeast Normal University, Changchun, China.
The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as the leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation and complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient image perception. As a p-type oxide material, CuO exhibits outstanding theoretical photoelectric conversion efficiency and broadband photoresponse.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Department of Chemical Engineering, Indian Institute of Technology Gandhinagar, India.
Self-assembly of nanoparticles (NPs) in solution has garnered tremendous attention among researchers because of their electrical, chemical, and optoelectronic properties at the macroscale with potential applications in bio-imaging, bio-medicine, and therapeutics. Control of size, shape, and composition at the nanoscale is important in tuning the material's bulk properties. The grafting of NPs with polymers enables us to tune such bulk material properties at the nano level by controlling their assemblies, especially in solutions.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Advancements in artificial intelligence (AI) and big data have highlighted the limitations of traditional von Neumann architectures, such as excessive power consumption and limited performance improvement with increasing parameter numbers. These challenges are significant for edge devices requiring higher energy and area efficiency. Recently, many reports on memristor-based neural networks (Mem-NN) using resistive switching memory have shown efficient computing performance with a low power requirement.
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