Chiral Phonon, Valley Polarization, and Inter/Intravalley Scattering in a van der Waals ReSe Semiconductor.

ACS Nano

Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.

Published: December 2024

AI Article Synopsis

  • Exploring the role of valley manipulatable layered semiconductors, particularly in valleytronic devices, is the focus of this research on van der Waals (vdW) ReSe, highlighting its phonon chirality and scattering behavior.
  • The study employs various spectroscopic techniques to reveal critical features like the direction of Re chains, chiral phonon existence, and the influence of layer thickness and temperature on valley polarization strength.
  • The findings indicate potential advancements in valley physics and the development of valley(opto)tronic nanodevices using low-symmetry vdW ReSe due to its strong phonon-photon coupling and exciton-like effects.

Article Abstract

Exploring valley manipulatable layered semiconductors is highly significant for valleytronic devices. Here, we report the phonon chirality and resulting inter/intravalley scattering in valley polarized van der Waals (vdW) layered ReSe by linearly/circularly polarized Raman (L/CPR), transmission (L/CPT), and photoluminescence (L/CPL) spectroscopic techniques. L/CPR combined with scanning transmission electron microscopy determines the Re chains' direction and displays the existence of chiral phonons. The LPT discloses the energetic valley polarization between the Re chains and its perpendicular crystal axis directions. Intriguingly, the valley polarization strength depends on the layer thickness even in a micrometer scale and abnormaly increases with temperature increase. Further, CPT manifests the optical rotation in ReSe due to strong chiral phonon-photon coupling. More essentially, L/CPL unveils a strong exciton-like effect (Stokes shift) that can be interpreted from the inter/intravalley scattering related to the (chiral) phonon-carrier coupling. This investigation suggests a promising platform based on a low-symmetry vdW ReSe semiconductor for exploring valley physics and fabricating valley(opto)tronic nanodevices.

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http://dx.doi.org/10.1021/acsnano.4c15485DOI Listing

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