Two-Dimensional Pentagonal Materials with Parabolic Dispersion and High Carrier Mobility.

Materials (Basel)

School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.

Published: November 2024

AI Article Synopsis

  • Researchers are exploring materials with high carrier mobility, like graphene, but its zero band gap limits its effectiveness in field-effect transistors (FETs).
  • They investigated a new material called the -MX monolayer, made of pentagonal lattices, which shows parabolic dispersion, enabling a direct band gap and high carrier mobility between 0.551-1.105 eV.
  • The -MX monolayer, especially with nitrogen, could be easily manufactured and offers unique mechanical properties and strong ultraviolet absorption, making it a promising candidate for advanced two-dimensional semiconductor applications.

Article Abstract

Materials with high carrier mobility, represented by graphene, have garnered significant interest. However, the zero band gap arising from linear dispersion cannot achieve an ideal on-off ratio in field-effect transistors (FETs), limiting practical applications in certain fields. In contrast, parabolic dispersion usually exhibits extremely high carrier mobility and an appropriate band gap. In this work, we predicted a planar pentagonal lattice composed entirely of pentagons (namely -MX monolayer), where M = Ni, Pd and Pt, X = group V elements. Using first-principles calculations, we demonstrated a parabolic dispersion within this framework, which results in intriguing phenomena, such as a direct band gap (0.551-1.105 eV) and extraordinary high carrier mobility. For -MX monolayer, the carrier mobility can attain ~1 × 10 cm V s (PBE), surpassing those of black phosphorene, graphene and 2D hexagonal materials. This monolayer also displays anisotropic mechanical properties and significant absorption peaks in the ultraviolet spectrum. Remarkably, 2D -MX monolayers are promising for successful experimental exfoliation, particularly when X is a nitrogen element, opening up new possibilities for designing two-dimensional semiconductor materials characterized by high carrier mobility.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11596016PMC
http://dx.doi.org/10.3390/ma17225543DOI Listing

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