Transplantation-based cell therapy holds the potential to offer sustained and physiological repair for neurological diseases and injuries, which requires the integration of transplanted neurons into the neural circuits of the human brain. Recent studies involving transplantation of human pluripotent stem cell-derived neural progenitors into the brain of model animals reveal the remarkable capacity of grafted immature human neurons to mature, project axons in a long distance, and form both pre- and postsynaptic connections with host neurons, corresponding to functional recovery. Strikingly, this circuit integration depends largely on the identity of the transplanted cells and may be modified by external stimuli. This realization begs for enriched authentic target cells for transplantation and combination with rehabilitation for better therapeutic outcomes.
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http://dx.doi.org/10.1016/j.gde.2024.102225 | DOI Listing |
Chem Sci
January 2025
Department of Chemistry, National Tsing Hua University Hsinchu 300044 Taiwan
PbZrTiO cubes with tunable sizes and cuboids have been hydrothermally synthesized. PbZrTiO cubes with three different Zr : Ti atomic percentages were also prepared. Analysis of synchrotron X-ray diffraction (XRD) patterns reveals the presence of two lattice components for these samples.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China.
Faraday cages are extensively utilized in plasma-based etching and deposition processes to regulate ion behavior due to their shielding effect on electromagnetic fields. Herein, vertical silicon nanopillar arrays are fabricated through SF and O reactive ion etching. By incorporation of a Faraday cage in the plasma equipment, the impact of the Faraday cage on the morphology of the silicon nanopillars is analyzed; the Faraday cage blocks out the sputtered particles and eradicates the formation of silicon nanograss.
View Article and Find Full Text PDFNature
January 2025
Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.
The integrated frequency comb generator based on Kerr parametric oscillation has led to chip-scale, gigahertz-spaced combs with new applications spanning hyperscale telecommunications, low-noise microwave synthesis, light detection and ranging, and astrophysical spectrometer calibration. Recent progress in lithium niobate (LiNbO) photonic integrated circuits (PICs) has resulted in chip-scale, electro-optic (EO) frequency combs, offering precise comb-line positioning and simple operation without relying on the formation of dissipative Kerr solitons. However, current integrated EO combs face limited spectral coverage due to the large microwave power required to drive the non-resonant capacitive electrodes and the strong intrinsic birefringence of LiNbO.
View Article and Find Full Text PDFNat Commun
January 2025
Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China.
Visual sensors, including 3D light detection and ranging, neuromorphic dynamic vision sensor, and conventional frame cameras, are increasingly integrated into edge-side intelligent machines. However, their data are heterogeneous, causing complexity in system development. Moreover, conventional digital hardware is constrained by von Neumann bottleneck and the physical limit of transistor scaling.
View Article and Find Full Text PDFMicrosyst Nanoeng
January 2025
The School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China.
In this article, a CMOS-compatible Pirani vacuum gauge was proposed featuring enhanced sensitivity, lower detection limit, and high-temperature stability, achieved through the implementation of a surface micromachining method coupled with a temperature compensation strategy. To improve performance, a T-type device with a 1 µm gap was fabricated resulting in an average sensitivity of 1.10 V/lgPa, which was 2.
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