AI Article Synopsis
- The study explores the use of nano-hole array photonic crystal structures in Ge-on-Si single photon avalanche diodes (SPADs) to enhance their performance, specifically focusing on single photon detection efficiencies (SPDE).
- It highlights the need for research into the effects of these structures on SPDE and dark count rates, establishing a platform for optimization and analysis of photonic crystals within SPAD devices.
- Simulations indicate that optimized photonic crystal designs could significantly boost photon absorption to 37.09% at 1550 nm, potentially resulting in over 2.4 times higher SPDE and improved noise-equivalent power if surfaces are well-passivated.
Article Abstract
Simulations of single photon avalanche diodes (SPADs) based on the Ge-on-Si material platform are presented, highlighting the potential performance enhancement achievable with nano-hole array photonic crystal structures. Such structures can be used to enhance photon absorption and therefore increase single photon detection efficiencies (SPDE). However, there is yet to be a study of these structures in application to Ge-on-Si SPADs to determine if the optical enhancements can be realized as SPDE or to evaluate the change in dark count rate due to the nano-holes that form the photonic crystal. This work establishes an optimization and analysis platform for investigating photonic crystal structures on SPAD devices. Both a direct Ge etch method, and an etched amorphous Si design are compared to a reference device with an optimized anti-reflection coating. Finite difference time domain simulations were used to optimize the photonic crystal parameters for these structures, finding a potential absorption of up to 37.09 % at wavelengths of 1550 nm for a 1 µm absorption layer, compared to 11.33 % for the reference device. Subsequently, TCAD simulations and custom code were used to calculate the effective enhancement to SPAD performance metrics, as a function of material and passivation quality, showing up to 2.41x higher SPDE and 2.57x better noise-equivalent power is achievable provided etched surfaces are sufficiently well passivated.
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| http://dx.doi.org/10.1364/OE.531687 | DOI Listing |
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