1.8-µm pitch, 47-ps jitter SPAD array in a 130 nm SiGe BiCMOS process.

We introduce the world's first SPAD family design in 130 nm SiGe BiCMOS process. At 1.8 µm, we achieved the smallest pitch on record thanks to guard-ring sharing techniques, while keeping a relatively high fill factor of 24.2%. 4×4 SPAD arrays with two parallel selective readout circuits were designed to explore crosstalk and scalability. The SPAD family has a minimum breakdown voltage of 11 V, a maximum PDP of 40.6%, and a typical timing jitter of 47 ps FWHM. The development of silicon SPADs in SiGe process paves the way to Ge-on-Si SPADs for SWIR applications, and to cryogenic optical interfaces for quantum applications.