AI Article Synopsis
- Researchers developed new photoconductive, continuous wave THz detectors using rhodium-doped InGaAs that are excited by 1550 nm light.
- Rh-doped InGaAs shows better carrier mobility compared to iron-doped materials, leading to a significant 10-fold increase in responsivity and noise-equivalent-power while keeping the same bandwidth.
- The new detectors achieved a record peak dynamic range of 132 dB in a homodyne spectrometer setup, improving by 20 dB over previous technologies.
Article Abstract
For the first time, we present photoconductive, continuous wave (cw) terahertz (THz) detectors for 1550 nm excitation based on rhodium- (Rh) doped indium gallium arsenide (InGaAs) grown by molecular beam epitaxy. Compared to iron- (Fe) doped material, the Rh-doped InGaAs shows higher carrier mobilities with similar carrier lifetimes. Therefore, these photoconductive antennas outperform InGaAs:Fe-based detectors by a factor of 10 in terms of responsivity and noise-equivalent-power (NEP) while maintaining the same bandwidth. In a homodyne spectrometer configuration, we achieve a record peak dynamic range (DNR) of 132 dB, which constitutes an improvement of 20 dB.
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| http://dx.doi.org/10.1364/OE.532465 | DOI Listing |
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