The utilization of fractional-order vortex beams extends the diversity of optical field manipulation, permits for more flexible control over beam propagation, and provides novel applications in optical communications, edge enhancement imaging, and particle manipulation. However, compared with the integer-order vortex beams, the topological charge measurement techniques for fractional-order vortex beams are not well developed, impeding the further exploration of its applications. In this paper, the frequency signal of rotational Doppler effect and corresponding broadening behavior under the fractional-order vortex beam illumination were analyzed. When the fractional topological charge approaches a half integer, the broadening is minimized. Leveraging this relationship, we designed a phase-compensated scheme coupled with signal-to-noise ratio detection to realize the real-time fractional topological charge measurement. The single pixel photodetector was used and eliminated the need for two-dimensional image acquisition and analysis, ensuring efficient acquisition and quantitative analysis. Both theoretical and experimental results confirm the feasibility of this method, thereby advancing the comprehension of the optical Doppler effect and potentially paving the way for future investigations into fractional vortex beams.
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Nano Lett
January 2025
Institut für Festkörperelektronik, Technische Universität Wien, Gußhausstraße 25, 1040 Vienna, Austria.
We synthesized and spectroscopically investigated monolayer (ML) C on the topological insulator (TI) BiTe. This C/BiTe heterostructure is characterized by an excellent translational order in a novel (4 × 4) C superstructure on a (9 × 9) cell of BiTe. Angle-resolved photoemission spectroscopy (ARPES) of C/BiTe reveals that ML C accepts electrons from the TI at room temperature, but no charge transfer occurs at low temperatures.
View Article and Find Full Text PDFNat Commun
January 2025
School of Materials Science and Engineering, Peking University, Beijing, P.R. China.
Designing catalysts with well-defined, identical sites that achieve site-specific selectivity, and activity remains a significant challenge. In this work, we introduce a design principle of topological-single-atom catalysts (T-SACs) guided by density functional theory (DFT) and Ab initio molecular dynamics (AIMD) calculations, where metal single atoms are arranged in asymmetric configurations that electronic shield topologically misorients d orbitals, minimizing unwanted interactions between reactants and the support surface. Mn/CeO catalysts, synthesized via a charge-transfer-driven approach, demonstrate superior catalytic activity and selectivity for NO removal.
View Article and Find Full Text PDFSci Adv
January 2025
New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong, Hong Kong 999077, China.
Real multi-bandgap systems have non-abelian topological charges, with Euler semimetals being a prominent example characterized by real triple degeneracies (RTDs) in momentum space. These RTDs serve as "Weyl points" for real topological phases. Despite theoretical interest, experimental observations of RTDs have been lacking, and studies mainly focus on individual RTDs.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea.
The fundamental characteristics of collective interactions in topological band structures can be revealed by the exploration of charge screening in topological materials. In particular, distinct anisotropic screening behaviors are predicted to occur in Dirac nodal line semimetals (DNLSMs) due to their peculiar anisotropic low-energy dispersion. Despite the recent extensive theoretical research, experimental observations of exotic charge screening in DNLSMs remain elusive, which is partly attributed to the coexisting trivial bands near the Fermi energy.
View Article and Find Full Text PDFAdv Mater
January 2025
CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.
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