The lack of low temperature processable, high-performance p-type oxide thin-film transistors (TFTs) limits their implementation in monolithically integrated back-end-of-line (BEOL) CMOS circuitries. In this work, we demonstrate a reactive magnetron-sputtered SnO TFT with unprecedented hole field-effect mobility (μ) of 38.7 cm/V·s, as well as an on/off current ratio () of 2.5 × 10 and lower subthreshold swing (SS) of 240.9 mV/dec when compared to reported works on p-type oxide-based TFTs. Material characterization correlated with the SnO TFTs' electrical behavior elucidated the performance to the structural and compositional phase modulation of the SnO thin films, modulated by O partial pressure during deposition and post-encapsulation annealing. By integrating the SnO TFT with an IGZO TFT in both planar and stacked complementary FET-like form, we demonstrated a true oxide-based CMOS inverter, achieving one of the highest voltage gains of 57 and the lowest static power consumption down to 34 pW for both on and off states.
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