This study investigates the crystallization behavior of electrospun coaxial fibers composed of crystalline poly(ethylene oxide) (PEO) in the core and crystalline poly(L-lactide) (PLLA) in the sheath. The influence of cold crystallization temperature and premelting temperature on the crystallization of PEO and PLLA is investigated. At a cold crystallization temperature of ≤60 °C, PLLA remained immobile. PEO crystallization is hard-confined, leading to a low degree of crystallinity. At a cold crystallization temperature of >60 °C, PEO melted, whereas PLLA crystallized. An increase in cold crystallization temperature results in an increase in the crystallite size and crystallinity of PLLA. Furthermore, the melt crystallization behavior of PEO in the coaxial fibers is strongly influenced by its premelting temperature and crystallization temperature. A higher premelting temperature leads to enhanced interdiffusion between PEO and PLLA. This increased confinement results in a decrease in PEO's crystallizability. Additionally, premelting relaxes the PEO chains, causing a shift in crystal orientation from parallel to the fiber axis (observed in as-electrospun fibers) to perpendicular to the fiber axis (observed in melt-crystallized fibers). Moreover, at a low melt crystallization temperature, demixing between PEO and PLLA is observed. This, coupled with a higher degree of supercooling, leads to an increase in PEO's crystallizability.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1002/marc.202400731 | DOI Listing |
ACS Appl Mater Interfaces
December 2024
Center for Optics Research and Engineering, State Key Laboratory of Crystal Materials, Shandong University, Qingdao 266237, China.
Shear mode ultrasonic waves are in high demand for structural health monitoring (SHM) applications owing to their nondispersive characteristics, singular mode, and minimal energy loss, especially in harsh environments. However, the generation and detection of a pure shear wave using conventional piezoelectric materials present substantial challenges because of their complex piezoelectric response, involving multiple modes. Herein, we introduce a high-quality piezoelectric crystal BiSiO (BSO), exhibiting a robust piezoelectric response ( = 45.
View Article and Find Full Text PDFSci Rep
December 2024
Centre Énergie, Matériaux Télécommunications, Institut National de la Recherche Scientifique, 1650, Blvd, Lionel-Boulet, Varennes, QC, J3X-1P7, Canada.
RF-sputtering is used to deposit TiO-Magneli-phase films onto various substrates at deposition temperatures (T) ranging from 25 to 650 °C. Not only the structural, but also electrical conductivity, optical absorbance and photothermal properties of the TiO films are shown to change significantly with T. A T of 500 °C is pointed out as the optimal temperature that yields highly-crystalized pure-TiO-Magneli phase with a densely-packed morphology and a conductivity as high as 740 S/cm.
View Article and Find Full Text PDFSci Rep
December 2024
Department of Physics, University of Liverpool, Oxford Street, Liverpool, L69 7ZE, UK.
Topological semimetals have recently garnered widespread interest in the quantum materials research community due to their symmetry-protected surface states with dissipationless transport which have potential applications in next-generation low-power electronic devices. One such material, [Formula: see text], exhibits Dirac nodal arcs and although the topological properties of single crystals have been investigated, there have been no reports in crystalline thin film geometry. We examined the growth of [Formula: see text] heterostructures on a range of single crystals by optimizing the electron beam evaporation of Pt and Sn and studied the effect of vacuum thermal annealing on phase and crystallinity.
View Article and Find Full Text PDFSci Rep
December 2024
Institute of Physics, University of São Paulo, São Carlos, 13560-590, SP, Brazil.
When combined with certain metal species, films of amorphous Ge or Si can have their typical crystallization temperatures decreased, by a factor of three or four, down to ~ 200 °C. The phenomenon is called metal-induced crystallization (MIC) and, since its first observation in the late 1960's, shows a great technological potential in producing (poly-)crystalline films of Ge or Si onto low-melting point substrates under reduced energy conditions. From the scientific point of view, the microscopic mechanisms behind the MIC phenomenon (still) represents a scientific challenge, where most of the proposed models are invariably influenced by the samples details giving the impression that they only apply to very specific metal-semiconductor combinations and/or circumstances.
View Article and Find Full Text PDFSci Rep
December 2024
School of Physics, IISER Thiruvananthapuram, Vithura, Kerala, 695551, India.
This work reports magnetic field direction dependent second magnetisation peak (SMP) anomaly in single crystals of oxygenated [Formula: see text] for [Formula: see text] ab. Detailed investigations on crystal A revealed the direction dependence of SMP anomaly at temperatures below 25 K, above which the direction dependence vanishes. The state of spatial order of the vortex lattice was found to be correlated to the vortex lattice symmetry that underwent a change at certain fields and was captured via single flux jumps observed in the third and fifth quadrant of magnetisation hysteresis loops.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!