The hybrid integration of two-dimensional (2D) materials on various photonic integration platforms has attracted widespread research interest because of the new functionalities enabled by the 2D materials for applications in photodetection, optical modulation and nonlinear optical signal processing. Tellurium is known to have high mobility, and quasi-2D tellurium is stable in air and has a small bandgap that may make it suitable for platform-independent scalable integration of high-performance photodetectors in the infrared band. In this work, we propose and implement a new structure for integrating tellurium with silicon nitride (SiN) waveguides, adding photodetector capability to an otherwise passive waveguide platform. At a wavelength of 1570 nm, the fabricated tellurium photodetector has an experimentally measured responsivity of 0.5 A W at 1 V bias voltage and a bandwidth of 12 GHz. We show that the bandwidth is not limited by the carrier transit time, but rather by the RC time constant, which can be further improved.
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http://dx.doi.org/10.1039/d4nr03900a | DOI Listing |
ACS Appl Mater Interfaces
December 2024
Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
Small
December 2024
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
Broadband detection technology is crucial in the fields of astronomy and environmental surveying. Two dimensional (2D) materials have emerged as promising candidates for next-generation broadband photodetectors with the characteristics of high integration, multi-dimensional sensing, and low power consumption. Among these, 2D tellurium (Te) is particularly noteworthy due to its excellent mobility, tunable bandgap, and air stability.
View Article and Find Full Text PDFNanoscale
December 2024
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, People's Republic of China.
The hybrid integration of two-dimensional (2D) materials on various photonic integration platforms has attracted widespread research interest because of the new functionalities enabled by the 2D materials for applications in photodetection, optical modulation and nonlinear optical signal processing. Tellurium is known to have high mobility, and quasi-2D tellurium is stable in air and has a small bandgap that may make it suitable for platform-independent scalable integration of high-performance photodetectors in the infrared band. In this work, we propose and implement a new structure for integrating tellurium with silicon nitride (SiN) waveguides, adding photodetector capability to an otherwise passive waveguide platform.
View Article and Find Full Text PDFNanotechnology
October 2024
Department of Physics and Astronomy, National Institute of Technology, Rourkela 769008, India.
In the field of electronic and optoelectronic applications, two-dimensional materials are found to be promising candidates for futuristic devices. For the detection of infrared (IR) light, MoTepossesses an appropriate bandgap for which p-MoTe/n-Si heterojunctions are well suited for photodetectors. In this study, a rapid thermal technique is used to grow MoTethin films on silicon (Si) substrates.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2024
School of Advanced Fusion Studies and AI Semiconductor, University of Seoul, Seoul 02504, Republic of Korea.
van der Waals heterojunctions utilizing two-dimensional (2D) transition-metal dichalcogenide (TMD) materials have emerged as focal points in the field of optoelectronic devices, encompassing applications in light-emitting devices, photodetectors, solar cells, and beyond. In this study, we transferred few-atomic-layer films of compositionally graded ternary MoSTe alloys onto metal-organic chemical vapor deposition-grown molybdenum disulfide (MoS) as p- and n-type structures, leading to the creation of a van der Waals vertical heterostructure. The characteristics of the fabricated MoSTe/MoS vertical-stacked heterojunction were investigated considering the influence of tellurium (Te) incorporation.
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