Managing Solvent Complexes to Amplify Ripening Process by Covalent Interaction Driving Force Under External Field for Perovskite Photovoltaic.

Adv Mater

College of Chemistry and Chemical Engineering, Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China.

Published: November 2024

AI Article Synopsis

  • Post-annealing is commonly used to treat perovskite films, but it leads to solvent complexes accumulating at the bottom, which can harm device performance.
  • A new strategy involving the use of a liquid crystal (LC) helps improve the ripening process by promoting the upward movement of these solvent complexes through thermal and force fields.
  • This enhanced ripening process results in better film quality and device efficiency, achieving a record efficiency of 25.24% while maintaining around 75% efficiency after prolonged damp heat testing.

Article Abstract

Up to now, post-annealing is most commonly used to post treat the perovskite film to accelerate the ripening process. Nonetheless, the top-down crystallization mechanism impedes the efficient desolvation of solvent complexes. Thus, residual solvent complexes tend to accumulate at the bottom of the film during the ripening process and deteriorate the device. Here, a new strategy with unique concept is promoted to amplify ripening process of perovskite film, in which a nematic thermotropic liquid crystal (LC) molecular is introduced to facilitate the conversion of solvent complexes by utilizing the liquid crystalline behavior under external field. Upon the concurrent application of thermal and force fields, the covalent interaction between LC and solvent complexes generates a driving force, which promotes upward migration of solvent complexes, thereby facilitating their engagement in the ripening process. In addition, the driving force under external fields assists the flattening of grain boundary grooves. Therefore, film quality is improved efficiently with amplified ripening process and adequately handled buried interface. Based on the positive effects, the devices achieve a champion efficiency of 25.24%, and sustained ≈75% of its initial efficiency level even after undergoing a damp heat test (85 °C/85% RH) for 1400 h.

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Source
http://dx.doi.org/10.1002/adma.202409971DOI Listing

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